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NTE2654 PDF预览

NTE2654

更新时间: 2024-11-02 15:46:55
品牌 Logo 应用领域
NTE /
页数 文件大小 规格书
2页 41K
描述
Transistor,

NTE2654 技术参数

生命周期:ActiveReach Compliance Code:unknown
ECCN代码:EAR99风险等级:1.94
最大集电极电流 (IC):15 A配置:Single
最小直流电流增益 (hFE):35最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):130 W
子类别:Other Transistors表面贴装:NO
Base Number Matches:1

NTE2654 数据手册

 浏览型号NTE2654的Datasheet PDF文件第2页 
NTE2654 (NPN) & NTE2664 (PNP)  
Silicon Complementary Transistors  
Audio Power Amp Output  
Features:  
D High Collector Breakdown Voltage  
D Suitable for use in 80W High Fidelity Audio Amplifier Output Stage  
Absolute Maximum Ratings: (TC = +25°C unles otherwise specified)  
Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230V  
Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230V  
Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V  
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A  
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A  
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130W  
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55° to +150°C  
Electrical Characteristics: (TC = +25°C unles otherwise specified)  
Parameter  
Collector Cut-Off Current  
Emitter Cut-Off Current  
Symbol  
Test Conditions  
VCB = 230V, I = 0  
VEB = 5V, IC = 0  
Min Typ Max Unit  
ICBO  
-
-
-
-
-
5.0  
5.0  
-
μA  
μA  
V
IEBO  
Collector-Emitter Breakdown Voltage V(BR)CEO IC = 50mA, IB = 0  
230  
DC Current Gain  
NTE2654  
hFE  
VCE = 5V, IC = 1A  
VCE = 5V, IC = 7A  
80  
55  
35  
-
-
160  
160  
-
NTE2664  
Both Devices  
60  
Collector-Emitter Saturation Voltage  
NTE2654  
VCE(sat) IC = 8A, IB = 0.8A  
-
-
-
-
0.4  
1.5  
1.0  
30  
3.0  
3.0  
1.5  
-
V
V
NTE2664  
Base-Emitter Voltage  
Transition Frequency  
VBE  
fT  
VCE = 5V, IC = 7A  
VCE = 5V, IC = 1A  
V
MHz  
Collector Output Capacitance  
NTE2654  
Cob  
VCB = 10V, IE = 0, f = 1MHz  
-
-
200  
360  
-
-
pF  
pF  
NTE2664  

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