NTE2636
Silicon NPN Transistor
Horizontal Deflection w/Internal Damper Diode
Features:
D High Breakdown Voltage: VCES = 1500V
D Built–In Damper Diode
D Isolated TO3PFM Type Package
Applications:
D TV/Character Display Horizontal Deflection Output
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Collector Peak Current, IC(peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A
Collector Surge Current, IC(surge) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A
Collector–Emitter Diode Forward Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
6
Typ Max Unit
Emitter–Base Breakdown Voltage
Collector Cutoff Current
V
I = 500mA, I = 0
–
–
–
–
–
–
–
–
500
25
5
V
(BR)EBO
E
C
I
V
= 1500V, R = 0
–
µA
CES
CE
CE
BE
DC Current Transfer Ratio
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Collector–Emitter Diode Forward Voltage
Fall Time
h
FE
V
= 5V, I = 1A
–
C
V
CE(sat)
I = 6A, I = 1.2A
–
V
V
C
B
V
BE(sat)
I = 6A, I = 1.2A
–
1.5
2.0
0.5
C
B
V
ECF
I = 8A
F
–
V
t
f
I
CP
f
H
= 6A, I = 1.2A, I ` –2.4A,
–
µs
B1
B2
= 31.5kHz