NTE2593

更新时间： 2024-11-01 22:40:39

品牌	Logo	应用领域
NTE		晶体开关放大器晶体管
页数	文件大小	规格书
2页	24K
描述
Silicon NPN Transistor High Voltage Amp/Switch

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数据手册

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NTE2593 数据手册

NTE2593

Silicon NPN Transistor

High Voltage Amp/Switch

Features:

D High Breakdown Voltage: V_(BR)CEO= 2100V Min

D Low Output Capacitance

D Wide ASO Range

D Isolated TO220 Type Package

Absolute Maximum Ratings: (T_C= +25°C unless otherwise specified)

Collector–Base Voltage, V_CBO. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2100V

Collector–Emitter Voltage, V_CEO. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2100V

Emitter–Base Voltage, V_EBO. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V

Collector Current, I_C

Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA

Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA

Collector Power Dissipation, P_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W

Operating Junction Temperature, T_J. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, T_stg. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Electrical Characteristics: (T_C= +25°C unless otherwise specified)

Parameter

Collector Cutoff Current

Emitter Cutoff Current

Symbol

I_CBO

I_EBO

h_FE

Test Conditions

V_CB= 2100V, I_E= 0

V_EB= 4V, I_C= 0

Min Typ Max Unit

–

µA

DC Current Gain

V_CE= 5V, I_C= 500µA

V_CE= 10V, I_C= 500µA

–

Gain Bandwidth Product

Collector–Emitter Saturation Voltage

Base–Emitter Saturation Voltage

f_T

MHz

V_CE(sat)I_C= 1mA, I_B= 200µA

V_BE(sat)I_C= 1A, I_B= 200µA

–

Collector–Base Breakdown Voltage V_(BR)CBOI_C= 10µA, I_E= 0

Collector–Emitter Breakdown Voltage V_(BR)CEOI_C= 100µA, R_BE= ∞

2100

–

Emitter–Base Breakdown Voltage

Output Capacitance

V_(BR)EBOI_E= 10µA, I_C= 0

C_obV_CB= 100V, f = 1MHz

–

1.3

–

中文翻译

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