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NTE2579 PDF预览

NTE2579

更新时间: 2024-11-01 22:40:39
品牌 Logo 应用领域
NTE 晶体开关晶体管功率双极晶体管局域网
页数 文件大小 规格书
2页 22K
描述
Silicon NPN Transistor High Voltage, High Speed Switch

NTE2579 技术参数

生命周期:ActiveReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.76
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):7 A集电极-发射极最大电压:200 V
配置:SINGLE最小直流电流增益 (hFE):10
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):40 MHz
Base Number Matches:1

NTE2579 数据手册

 浏览型号NTE2579的Datasheet PDF文件第2页 
NTE2579  
Silicon NPN Transistor  
High Voltage, High Speed Switch  
Features:  
D Fast Switching Speed  
D Low Saturation Voltage  
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)  
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V  
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V  
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V  
Collector Current, IC  
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A  
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A  
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A  
Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W  
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C  
Storage Temperature Rqange, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C  
Electrical Characteristics: (TA = +25°C unless otherwise specified)  
Parameter  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
Symbol  
ICBO  
Test Conditions  
VCB = 250V, IE = 0  
VEB = 5V, IC = 0  
Min Typ Max Unit  
100 µA  
IEBO  
100 µA  
hFE  
VCE = 1V, IC = 1A  
VCE = 1V, IC = 5A  
VCE = 10V, IC = 500mA  
15  
10  
10  
50  
Gain–Bandwidth Product  
fT  
40  
0.8  
1.5  
MHz  
V
Collector–Emitter Saturation Voltage  
Base–Emitter Saturation Voltage  
Collector–Base Breakdown Voltage  
Collector–Emitter Breakdown Voltage  
Emitter–Base Breakdown Voltage  
Fall Time  
VCE(sat) IC = 5A, IB = 500mA  
VBE(sat) IC = 5A, IB = 500mA  
V(BR)CBO IC = 1A, IE = 0  
V
400  
200  
6
V
V(BR)CEO IC = 1mA, RBE = ∞  
V(BR)EBO IE = 1mA, IC = 0  
V
V
tf  
VCC = 50V, IC = 5A,  
IB1 = –IB2 = 500mA,  
Pulse Width = 20µs,  
Duty Cycle 1%  
0.3  
µs  

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