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NTE2568 PDF预览

NTE2568

更新时间: 2024-11-19 22:54:19
品牌 Logo 应用领域
NTE 晶体开关晶体管功率双极晶体管局域网
页数 文件大小 规格书
2页 25K
描述
Silicon Complementary Transistors High Current Switch

NTE2568 技术参数

生命周期:Active零件包装代码:SFM
包装说明:TO-220, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.76
Is Samacsys:N外壳连接:ISOLATED
最大集电极电流 (IC):10 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):70
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):30 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

NTE2568 数据手册

 浏览型号NTE2568的Datasheet PDF文件第2页 
NTE2568 (NPN) & NTE2569 (PNP)  
Silicon Complementary Transistors  
High Current Switch  
Features:  
D Low Saturation Voltage  
D Fast Switching Speed  
D Isolated TO220 Type Package  
Applications:  
D Car–Use Inductance Drivers, Lamp Drivers  
D Inverter Drivers, Converters (Strobes, Flashes, FLT Lighting Circuits)  
D Power Amplifiers (High–Power Car Stereos, Motor Control)  
D High–Speed Switching (Switching Regulators, Drivers)  
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)  
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V  
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V  
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V  
Collector Current, IC  
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A  
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A  
Collector Power Dissipation, PC  
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W  
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W  
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C  
Electrical Characteristics: (TC = +25°C unless otherwise specified)  
Parameter  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
Symbol  
ICBO  
IEBO  
hFE  
Test Conditions  
VCB = 40V, IE = 0  
Min Typ Max Unit  
0.1  
0.1  
280  
mA  
mA  
VEB = 4V, IC = 0  
VCE = 2V, IC = 1A  
VCE = 5V, IC = 1A  
70  
100  
Gain Bandwidth Product  
Collector–Emitter Saturation Voltage  
fT  
MHz  
V
VCE(sat) IC = 5A, IB = 0.25A  
0.4  

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