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NTE2534 PDF预览

NTE2534

更新时间: 2024-11-23 22:40:39
品牌 Logo 应用领域
NTE 晶体开关小信号双极晶体管局域网
页数 文件大小 规格书
2页 25K
描述
Silicon Complementary Transistors High Current Switch

NTE2534 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.76Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):12 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):30JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):20 MHzBase Number Matches:1

NTE2534 数据手册

 浏览型号NTE2534的Datasheet PDF文件第2页 
NTE2534 (NPN) & NTE2535 (PNP)  
Silicon Complementary Transistors  
High Current Switch  
Features:  
D Low Collector Emitter Saturation Voltage  
Applications:  
D Relay Drivers  
D High Speed Inverters  
D Converters  
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)  
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V  
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V  
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V  
Collector Current, IC  
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A  
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A  
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W  
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C  
Electrical Characteristics: (TA = +25°C unless otherwise specified)  
Parameter  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
Symbol  
ICBO  
Test Conditions  
VCB = 80V, IE = 0  
Min Typ Max Unit  
0.1 mA  
0.1 mA  
280  
IEBO  
VEB = 4V, IC = 0  
VCE = 2V, IC = 1A  
VCE = 2V, IC = 6A  
VCE = 5V, IC = 1A  
hFE1  
100  
30  
hFE2  
Gain–Bandwidth Product  
fT  
20  
MHz  
Collector–Emitter Saturation Voltage  
NTE2534  
VCE(sat)  
IC = 6A, IB = 600mA  
0.5  
0.4  
V
V
NTE2535  

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