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NTE2518 PDF预览

NTE2518

更新时间: 2024-11-20 04:36:03
品牌 Logo 应用领域
NTE 晶体开关晶体管功率双极晶体管局域网
页数 文件大小 规格书
2页 25K
描述
Silicon Complementary Transistors High Current Switch

NTE2518 技术参数

生命周期:ActiveReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:2.19Is Samacsys:N
最大集电极电流 (IC):2.5 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):35
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:PNP
最大功率耗散 (Abs):10 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):140 MHzBase Number Matches:1

NTE2518 数据手册

 浏览型号NTE2518的Datasheet PDF文件第2页 
NTE2517 (NPN) & NTE2518 (PNP)  
Silicon Complementary Transistors  
High Current Switch  
Features:  
D Low Saturation Voltage  
D High Current Capacity and Wide ASO  
Applications:  
D Voltage Regulators  
D Relay Drivers  
D Lamp Drivers  
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)  
Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V  
Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V  
Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V  
Collector Current, IC  
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A  
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A  
Collector Dissipation, PC  
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W  
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W  
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C  
Electrical Characteristics: (TA = +25°C unless otherwise specified)  
Parameter  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
Symbol  
ICBO  
Test Conditions  
VCB = 50V, IE = 0  
Min Typ Max Unit  
100  
100  
400  
nA  
nA  
IEBO  
VEB = 4V, IC = 0  
hFE  
VCE = 2V, IC = 100mA  
VCE = 2V, IC = 2A  
140  
35  
Gain Bandwidth Product  
fT  
VCE = 10V, IC = 50mA  
140  
MHz  

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