5秒后页面跳转
NTE2430 PDF预览

NTE2430

更新时间: 2024-11-19 22:54:19
品牌 Logo 应用领域
NTE 晶体开关放大器晶体管
页数 文件大小 规格书
2页 22K
描述
Silicon NPN Transistor High Voltage Amp/Switch (Compl to NTE2431)

NTE2430 数据手册

 浏览型号NTE2430的Datasheet PDF文件第2页 
NTE2430  
Silicon NPN Transistor  
High Voltage Amp/Switch  
(Compl to NTE2431)  
Description:  
The NTE2430 is a silicon NPN transistor in a SOT–89 type surface mount package designed for use  
in amplifier and switching switching applications.  
Absolute Maximum Ratings:  
Collector–Base Voltage (Open Emitter), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V  
Collector–Emitter Voltage (Open Base), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V  
Emitter–Base Voltage (Open Collector), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V  
DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A  
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA  
Total Power Dissipation (TA +25°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W  
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C  
Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 125K/W  
Note 1. Device mounted on a ceramic substrate; area = 2.5cm2, thickness = 0.7mm.  
Electrical Characteristics: (TJ = +25°C unles otherwise specified)  
Parameter  
Collector Cutoff Current  
Emitter Cutoff Current  
Symbol  
Test Conditions  
Min Typ Max Unit  
I
V
V
= 300V, I = 0  
20  
10  
500  
1.3  
nA  
µA  
mV  
V
CES  
CE  
B
I
= 5V, I = 0  
C
EBO  
EB  
Collector–Emitter Saturation Voltage  
Base–Emitter Saturation Voltage  
DC Current Gain  
V
CE(sat)  
V
BE(sat)  
I = 50mA, I = 4mA  
C
B
I = 50mA, I = 4mA  
C
B
h
FE  
V
CE  
= 10V, I = 20mA  
40  
C
Collector Capacitance  
C
c
I = I = 0, V = 10, f = 1MHz  
2
pF  
E
e
CB  
Transitional Frequency  
f
T
V
CE  
= 10V, I = 10mA, f = 5MHz  
70  
MHz  
C

与NTE2430相关器件

型号 品牌 获取价格 描述 数据表
NTE2431 NTE

获取价格

Silicon PNP Transistor High Voltage Amp/Switch (Compl to NTE2430)
NTE244 NTE

获取价格

Silicon Complementary Transistors Darlington Power Amplifier
NTE245 NTE

获取价格

Silicon Complementary Transistors Darlington Power Amplifier
NTE246 NTE

获取价格

Silicon Complementary Transistors Darlington Power Amplifier
NTE247 NTE

获取价格

Silicon Complementary Transistors Darlington Power Amplifier
NTE248 NTE

获取价格

Silicon Complementary Transistors Darlington Power Amplifier
NTE249 NTE

获取价格

Silicon Complementary Transistors Darlington Power Amplifier
NTE25 NTE

获取价格

Silicon Complementary Transistors General Purpose Amplifier, Switch
NTE250 NTE

获取价格

Silicon Complementary Transistors Darlington Power Amplifier
NTE2501 NTE

获取价格

Silicon Complementary Transistors High Voltage for Video Output