5秒后页面跳转
NTE2426 PDF预览

NTE2426

更新时间: 2024-10-31 22:54:19
品牌 Logo 应用领域
NTE 晶体开关小信号双极晶体管达林顿晶体管
页数 文件大小 规格书
2页 26K
描述
Silicon Complementary Transistors Darlington Switch

NTE2426 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code:unknownHTS代码:8541.29.00.95
风险等级:1.24Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):0.5 A
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):2000
JESD-30 代码:R-PSSO-F3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

NTE2426 数据手册

 浏览型号NTE2426的Datasheet PDF文件第2页 
NTE2426 (NPN) & NTE2427 (PNP)  
Silicon Complementary Transistors  
Darlington Switch  
Description:  
The NTE2426 and NTE2427 are silicon planer Darlington transistors in a SOT–89 type surface mount  
package designed for use in industrial switching applications such as print hammer, solenoid, relay,  
and lamp drivers.  
Absolute Maximum Ratings:  
Collector–Base Voltage (Open Emitter), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V  
Collector–Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V  
Emitter–Base Voltage (Open Collector), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V  
Collector Current, IC  
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA  
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A  
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA  
Total Power Dissipation (TA +25°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W  
Operating Junction Temperature (Note 2), TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C  
Thermal Resistance, Junction–to–Ambient (Note 1, Note 2), RthJA . . . . . . . . . . . . . . . . . . . . 125K/W  
Thermal Resistance, Junction–to–Tab (Note 2), RthJTAB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10K/W  
Note 1. Device mounted on a ceramic substrate; area = 2.5cm2, thickness = 0.7mm.  
Note 2. Based on maximum average junction temperature in line with common industrial practice.  
The resulting higher junction teperature of the output transistor part is taken into account.  
Electrical Characteristics: (TJ = +25°C unles otherwise specified)  
Parameter  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
Symbol  
Test Conditions  
Min Typ Max Unit  
I
V
V
V
V
= 80V, V = 0  
10  
10  
µA  
µA  
CES  
CER  
BE  
I
= 4V, I = 0  
EBO  
EB  
CE  
CE  
C
h
FE  
= 10V, I = 150mA, Note 3  
1000  
2000  
C
= 10V, I = 500mA, Note 3  
C
Note 3. Measured under pulsed conditions.  

与NTE2426相关器件

型号 品牌 获取价格 描述 数据表
NTE2427 NTE

获取价格

Silicon Complementary Transistors Darlington Switch
NTE2428 NTE

获取价格

Silicon Complementary Transistors General Purpose Switch
NTE2429 NTE

获取价格

Silicon Complementary Transistors General Purpose Switch
NTE243 NTE

获取价格

Silicon Complementary Transistors Darlington Power Amplifier
NTE2430 NTE

获取价格

Silicon NPN Transistor High Voltage Amp/Switch (Compl to NTE2431)
NTE2431 NTE

获取价格

Silicon PNP Transistor High Voltage Amp/Switch (Compl to NTE2430)
NTE244 NTE

获取价格

Silicon Complementary Transistors Darlington Power Amplifier
NTE245 NTE

获取价格

Silicon Complementary Transistors Darlington Power Amplifier
NTE246 NTE

获取价格

Silicon Complementary Transistors Darlington Power Amplifier
NTE247 NTE

获取价格

Silicon Complementary Transistors Darlington Power Amplifier