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NTE2426 PDF预览

NTE2426

更新时间: 2024-11-19 22:54:19
品牌 Logo 应用领域
NTE 晶体开关小信号双极晶体管达林顿晶体管
页数 文件大小 规格书
2页 26K
描述
Silicon Complementary Transistors Darlington Switch

NTE2426 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code:unknownHTS代码:8541.29.00.95
风险等级:1.24Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):0.5 A
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):2000
JESD-30 代码:R-PSSO-F3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

NTE2426 数据手册

 浏览型号NTE2426的Datasheet PDF文件第2页 
NTE2426 (NPN) & NTE2427 (PNP)  
Silicon Complementary Transistors  
Darlington Switch  
Description:  
The NTE2426 and NTE2427 are silicon planer Darlington transistors in a SOT–89 type surface mount  
package designed for use in industrial switching applications such as print hammer, solenoid, relay,  
and lamp drivers.  
Absolute Maximum Ratings:  
Collector–Base Voltage (Open Emitter), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V  
Collector–Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V  
Emitter–Base Voltage (Open Collector), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V  
Collector Current, IC  
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA  
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A  
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA  
Total Power Dissipation (TA +25°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W  
Operating Junction Temperature (Note 2), TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C  
Thermal Resistance, Junction–to–Ambient (Note 1, Note 2), RthJA . . . . . . . . . . . . . . . . . . . . 125K/W  
Thermal Resistance, Junction–to–Tab (Note 2), RthJTAB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10K/W  
Note 1. Device mounted on a ceramic substrate; area = 2.5cm2, thickness = 0.7mm.  
Note 2. Based on maximum average junction temperature in line with common industrial practice.  
The resulting higher junction teperature of the output transistor part is taken into account.  
Electrical Characteristics: (TJ = +25°C unles otherwise specified)  
Parameter  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
Symbol  
Test Conditions  
Min Typ Max Unit  
I
V
V
V
V
= 80V, V = 0  
10  
10  
µA  
µA  
CES  
CER  
BE  
I
= 4V, I = 0  
EBO  
EB  
CE  
CE  
C
h
FE  
= 10V, I = 150mA, Note 3  
1000  
2000  
C
= 10V, I = 500mA, Note 3  
C
Note 3. Measured under pulsed conditions.  

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