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NTE2402 PDF预览

NTE2402

更新时间: 2024-11-19 22:49:55
品牌 Logo 应用领域
NTE 晶体放大器小信号双极晶体管射频小信号双极晶体管光电二极管
页数 文件大小 规格书
2页 25K
描述
Silicon Complementary Transistors Low Noise, UHF/VHF Amplifier

NTE2402 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:2.13
其他特性:LOW NOISE最大集电极电流 (IC):0.025 A
集电极-发射极最大电压:15 V配置:SINGLE
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):5000 MHzBase Number Matches:1

NTE2402 数据手册

 浏览型号NTE2402的Datasheet PDF文件第2页 
NTE2402 (NPN) & NTE2403 (PNP)  
Silicon Complementary Transistors  
Low Noise, UHF/VHF Amplifier  
Description:  
The NTE2402 (NPN) and NTE2403 (PNP) are silicon complementary transistors in an SOT–23 type  
surface mount package designed for use in UHF and microwave amplifiers in thick and thin–film cir-  
cuits, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. These tran-  
sistors feature low intermodulation distortion and high power gain. Due to very high transition fre-  
quency, these devices also have excellent wideband properties and low noise up to high frequencies.  
Absolute Maximum Ratings:  
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V  
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V  
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2V  
DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA  
Total Power Dissipation (TA +60°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW  
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C  
Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 430K/W  
Note 1. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm).  
Electrical Characteristics: (TJ = +25°C unless otherwise specified)  
Parameter  
Collector Cutoff Current  
DC Current Gain  
Symbol  
ICBO  
hFE  
fT  
Test Conditions  
VCB = 10V, IE = 0  
Min Typ Max Unit  
25  
50  
50  
nA  
VCE = 10V, IC = 14mA  
Transition Frequency  
Collector Capacitance  
Emitter Capacitance  
Feedback Capacitance  
VCE = 10V, IC = 14mA, f = 500MHz  
VCB = 10V, IE = Ie = 0, f = 1MHz  
VEB = 0.5V, IC = Ic = 0, f = 1MHz  
5
GHz  
pF  
Cc  
0.75  
0.8  
0.4  
Ce  
pF  
Cre  
VCE = 10V, IC = 2mA, f = 1MHz,  
TA = +25°C  
pF  

NTE2402 替代型号

型号 品牌 替代类型 描述 数据表
NTE2406 NTE

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