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NTE2383 PDF预览

NTE2383

更新时间: 2024-10-31 22:54:19
品牌 Logo 应用领域
NTE 开关
页数 文件大小 规格书
3页 29K
描述
MOSFET P-Channel Enhancement Mode, High Speed Switch (Compl to NTE2382)

NTE2383 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:1.82
其他特性:HIGH RELIABILITY雪崩能效等级(Eas):510 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):8 A
最大漏极电流 (ID):10.5 A最大漏源导通电阻:0.3 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL功耗环境最大值:75 W
最大功率耗散 (Abs):75 W最大脉冲漏极电流 (IDM):42 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):350 ns最大开启时间(吨):230 ns

NTE2383 数据手册

 浏览型号NTE2383的Datasheet PDF文件第2页浏览型号NTE2383的Datasheet PDF文件第3页 
NTE2383  
MOSFET  
P–Channel Enhancement Mode,  
High Speed Switch  
(Compl to NTE2382)  
Description:  
The NTE2383 is a MOS power P–Channel FET in a TO220 type package designed for high voltage,  
high speed power switching applications such as switching regulators, converters, solenoid, and relay  
drivers.  
Features:  
D Lower RDS(ON)  
D Improved Inductive Ruggedness  
D Fast Switching Times  
D Rugged Polysilicon Gate Cell Structure  
D Lower Input Capacitance  
D Extended Safe Operating Area  
D Improved High Temperature Reliability  
Absolute Maximim Ratings:  
Drain–Source Voltage (Note 1), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V  
Drain–Gate Voltage (RGS = 1M, Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V  
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V  
Continuous Drain Current, ID  
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.5A  
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A  
Drain Current, Pulsed (Note 3), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42A  
Gate Current, Pulsed, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1.5A  
Single Pulsed Avalanvhe Energy (Note 4), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 510mJ  
Avalanche Current, IAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.5A  
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W  
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6W/°C  
Operating Junction Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C  
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W  
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67°C/W  
Thermal Resistance, Case–to–Sink (Note 5), RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5°C/W  
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +300°C  
Note 1. TJ = +25° to +150°C  
Note 2. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.  
Note 3. Repetitive rating: Pulse width limited by max. junction temperature.  
Note 4. L = 8.5mH, VDD = 25V, RG = 25, Starting TJ = +25°C.  
Note 5. Mounting surface flat, smooth, and greased.  

NTE2383 替代型号

型号 品牌 替代类型 描述 数据表
STP10P6F6 STMICROELECTRONICS

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