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NTE238 PDF预览

NTE238

更新时间: 2024-10-31 22:54:19
品牌 Logo 应用领域
NTE 晶体晶体管电视
页数 文件大小 规格书
2页 25K
描述
Silicon NPN Transistor Color TV, Horizontal Output

NTE238 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, O-MBFM-P2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:1.98外壳连接:COLLECTOR
最大集电极电流 (IC):8 A配置:SINGLE
JEDEC-95代码:TO-3JESD-30 代码:O-MBFM-P2
元件数量:1端子数量:2
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN功耗环境最大值:100 W
最大功率耗散 (Abs):50 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:PIN/PEG端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON

NTE238 数据手册

 浏览型号NTE238的Datasheet PDF文件第2页 
NTE238  
Silicon NPN Transistor  
Color TV, Horizontal Output  
Description:  
The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use  
in deflection circuits.  
Features:  
D VCEX = 1500V  
D Safe Operating Area @ 50µs = 20A, 400V  
Absolute Maximum Ratings;  
Collector–Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V  
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V  
Collector Current–Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A  
Base Current–Continuous, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A  
Emitter Current–Continuous, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A  
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W  
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8W/°C  
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C  
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25°C/W  
Maximum Lead Temperature (Soldering Purposes, 1/8” from case for 5sec), TL . . . . . . . . . +275°C  
Electrical Characteristics: (TC =+25°C unless otherwise specified)  
Parameter  
OFF Characteristics  
Symbol  
Test Conditions  
Min Typ Max Unit  
Collector–Emitter Sustaining Voltage  
Collector Cutoff Current  
V
V = 50mA, I = 0  
750  
V
CEO(sus)  
C
B
I
V
CE  
BE  
= 1500V, V = 0  
0.25  
0.1  
mA  
mA  
CES  
EBO  
BE  
Emitter Cutoff Current  
I
V
= 5V, I = 0  
C
ON Characteristics (Note 1)  
Collector–Emitter Saturation Voltage  
Base Emitter Saturation Voltage  
SWITCHING CHARACTERISTICS  
Fall Time  
V
V
I = 5A, I = 1A  
5.0  
1.5  
V
V
CE(sat)  
C
B
I = 5A, I = 1A  
BE(sat)  
C
B
t
f
I = 5A, I = 1A, L = 8µH  
0.4  
1.0  
µs  
C
B1  
B
Note 1. Pulse test: Pulse Width 300µs, Duty Cycle = 2%.  

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