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NTE2379 PDF预览

NTE2379

更新时间: 2024-11-19 22:54:19
品牌 Logo 应用领域
NTE 晶体开关晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
3页 29K
描述
MOSFET N-Channel, Enhancement Mode High Speed Switch

NTE2379 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:2.27Is Samacsys:N
雪崩能效等级(Eas):570 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):6.2 A最大漏极电流 (ID):6.2 A
最大漏源导通电阻:1.2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):125 W
最大脉冲漏极电流 (IDM):25 A认证状态:Not Qualified
子类别:FET General Purpose Powers表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

NTE2379 数据手册

 浏览型号NTE2379的Datasheet PDF文件第2页浏览型号NTE2379的Datasheet PDF文件第3页 
NTE2379  
MOSFET  
N–Channel, Enhancement Mode  
High Speed Switch  
Features:  
D Dynamic dv/dt Rating  
D Repetitive Avalanche Rated  
D Fast Switching  
D Ease of Paralleling  
D Simple Drive Requirements  
Absolute Maximum Ratings:  
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V  
Drain Current, ID  
Continuous (VGS = 10V)  
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2A  
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.9A  
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A  
Gate Current (Pulsed), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1.5A  
Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 570mJ  
Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2A  
Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13mJ  
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V/ns  
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W  
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/°C  
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C  
Maximum Lead Temperature (During Soldering, 1/16” from case, 10sec), TL . . . . . . . . . . . . +300°C  
Thermal Resistance:  
Maximum Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0°C/W  
Typical Case–to–Sink (Mounting surface flat, smooth, and greased), RthCS . . . . . . 0.5°C/W  
Maximum Junction–to–Ambient (Free Air Operation), RthJA . . . . . . . . . . . . . . . . . . . . 62°C/W  
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.  
Note 2. VDD = 50V, starting TJ = +25°C, l = 27mH, RG = 25, IAS = 6.2A.  
Note 3. ISD 6.2A, di/dt 80A/µA, VDD V(BR)DSS, TJ +150°C.  

NTE2379 替代型号

型号 品牌 替代类型 描述 数据表
IXTP7N60P IXYS

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