是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | DIP | 包装说明: | DIP, DIP16,.25 |
针数: | 16 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8542.39.00.01 |
风险等级: | 5.74 | Is Samacsys: | N |
内置保护: | TRANSIENT | 驱动器位数: | 7 |
接口集成电路类型: | BUFFER OR INVERTER BASED PERIPHERAL DRIVER | JESD-30 代码: | R-PDIP-T16 |
JESD-609代码: | e0 | 功能数量: | 1 |
端子数量: | 16 | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 最大输出电流: | 0.12 A |
标称输出峰值电流: | 0.12 A | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | DIP | 封装等效代码: | DIP16,.25 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
电源: | 5/18 V | 认证状态: | Not Qualified |
子类别: | Peripheral Drivers | 最大供电电压: | 18 V |
最小供电电压: | 4.75 V | 表面贴装: | NO |
技术: | BIPOLAR | 温度等级: | INDUSTRIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NTE21 | NTE |
获取价格 |
Silicon Complementary Transistors High Power, Low Collector Saturation Voltage Power Outpu | |
NTE210 | NTE |
获取价格 |
Silicon Complementary Transistors General Purpose Output & Driver | |
NTE2102 | NTE |
获取价格 |
Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns | |
NTE2104 | NTE |
获取价格 |
MICROPROCESSOR & MEMORY CIRCUITS | |
NTE2107 | NTE |
获取价格 |
MICROPROCESSOR & MEMORY CIRCUITS | |
NTE211 | NTE |
获取价格 |
Silicon Complementary Transistors General Purpose Output & Driver | |
NTE21128 | NTE |
获取价格 |
Integrated Circuit NMOS, 128K (16K x 8) UV EPROM | |
NTE2114 | NTE |
获取价格 |
Integrated Circuit MOS, Static 4K RAM, 300ns | |
NTE2117 | NTE |
获取价格 |
MICROPROCESSOR & MEMORY CIRCUITS | |
NTE21256 | NTE |
获取价格 |
262,144-Bit Dynamic Random Access Memory (DRAM) |