是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | DIP, DIP16,.3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.82 |
内置保护: | TRANSIENT | 接口集成电路类型: | BUFFER OR INVERTER BASED PERIPHERAL DRIVER |
JESD-30 代码: | R-PDIP-T16 | JESD-609代码: | e0 |
功能数量: | 1 | 端子数量: | 16 |
最高工作温度: | 80 °C | 最低工作温度: | -20 °C |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | DIP |
封装等效代码: | DIP16,.3 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 3.5/9 V | 认证状态: | Not Qualified |
子类别: | Display Drivers | 最大供电电压: | 9 V |
最小供电电压: | 3.5 V | 标称供电电压: | 6 V |
表面贴装: | NO | 温度等级: | COMMERCIAL EXTENDED |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NTE2082 | NTE |
获取价格 |
Integrated Circuit 6−Stage Darlington Transistor Array | |
NTE2083 | NTE |
获取价格 |
Transistor, | |
NTE2084 | NTE |
获取价格 |
Integrated Circuit 5−Stage Darlington Transistor Array | |
NTE2085 | NTE |
获取价格 |
Integrated Circuit 4-Stage Darlington Array | |
NTE2086 | NTE |
获取价格 |
Integrated Circuit 4-Stage Darlington Array | |
NTE2087 | NTE |
获取价格 |
Integrated Circuit 4-Stage Darlington Array w/Pre-Drive Stage for TTL | |
NTE2088 | NTE |
获取价格 |
Integrated Circuit 4-Segment Darlington Array, w/Pre-Driver Stage for use with PMOS and 12 | |
NTE2090 | NTE |
获取价格 |
Integrated Circuit 7-Channel Transistor Array | |
NTE21 | NTE |
获取价格 |
Silicon Complementary Transistors High Power, Low Collector Saturation Voltage Power Outpu | |
NTE210 | NTE |
获取价格 |
Silicon Complementary Transistors General Purpose Output & Driver |