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NTE196 PDF预览

NTE196

更新时间: 2024-11-03 22:54:23
品牌 Logo 应用领域
NTE 晶体开关晶体管功率双极晶体管局域网
页数 文件大小 规格书
2页 27K
描述
Silicon Complementary Transistors Audio Power Output and Medium Power Switching

NTE196 技术参数

生命周期:Active零件包装代码:SFM
包装说明:TO-220, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:1.67
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):7 A集电极-发射极最大电压:70 V
配置:SINGLE最小直流电流增益 (hFE):2.3
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
功耗环境最大值:50 W最大功率耗散 (Abs):50 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):4 MHz
Base Number Matches:1

NTE196 数据手册

 浏览型号NTE196的Datasheet PDF文件第2页 
NTE196 (NPN) & NTE197 (PNP)  
Silicon Complementary Transistors  
Audio Power Output and Medium Power Switching  
Description:  
The NTE196 (NPN) and NTE197 (PNP) are silicon complementary transistors in a TO220 type pack-  
age designed for use in general purpose amplifier and switching applications.  
Features:  
D DC Current Gain Specified to 7 Amps: hFE = 2.3 Min @ IC = 7A  
D Collector–Emitter Sustaining Voltage: VCEO(sus) = 70V Min  
D High Current–Gain Bandwidth Product:  
fT = 4MHz Min @ IC = 500mA (NTE196)  
= 10MHz Min @ IC = 500mA (NTE197)  
Absolute Maximum Ratings:  
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V  
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V  
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V  
Collector Current, IC  
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A  
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A  
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A  
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W  
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/°C  
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C  
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.125°C/W  
Electrical Characteristics: (TC = +25°C unless otherwise specified)  
Parameter  
Symbol  
Test Conditions  
Min Typ Max Unit  
OFF Characteristics  
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0, Note 1  
70  
V
Collector Cutoff Current  
ICEO  
ICEX  
VCE = 60V, IB = 0  
1.0 mA  
100 µA  
2.0 mA  
1.0 mA  
VCE = 80V, VEB(off) = 1.5V  
VCE = 80V, VEB(off) = 1.5V, TC = +150°C  
VBE = 5V, IC = 0  
Emitter Cutoff Current  
IEBO  
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.  

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