5秒后页面跳转
NTE193A PDF预览

NTE193A

更新时间: 2024-09-08 23:54:51
品牌 Logo 应用领域
NTE 晶体小信号双极晶体管开关局域网
页数 文件大小 规格书
2页 25K
描述

NTE193A 技术参数

生命周期:Active零件包装代码:TO-92HS
包装说明:TO-92HS, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:2.12
Is Samacsys:N最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):180JESD-30 代码:O-PBFM-W3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:FLANGE MOUNT极性/信道类型:PNP
最大功率耗散 (Abs):0.6 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):120 MHzBase Number Matches:1

NTE193A 数据手册

 浏览型号NTE193A的Datasheet PDF文件第2页 
NTE192 (NPN) & NTE193 (PNP)  
NTE192A (NPN) & NTE193A (PNP)  
Silicon Complementary Transistors  
Audio Power Output  
Description:  
NTE192 (NPN)/NTE193 (PNP) and NTE192A (NPN)/NTE193A (PNP) are silicon complementary  
transistors in a TO92HS type package designed for use in general purpose industrial circuits. These  
devices are especially suited for high level linear amplifiers or medium speed switching circuits in  
industrial control applications.  
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)  
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V  
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V  
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V  
Continuous Collector Current (Note 1), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA  
Total Power Dissipation (TC = +25°C, Note 1), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900mW  
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2mW/°C  
Total Power Dissipation (TA = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 560mW  
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.47mW/°C  
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C  
Lead Temperature (During Soldering, 1/16” ±1/32” from case for 10sec max), TL . . . . . . . . +260°C  
Note 1. Determined from power limitations due to saturation voltage at this current.  
Electrical Characteristics: (TA = +25°C unless otherwise specified)  
Parameter  
DC Characteristics  
Collector Cutoff Current  
Symbol  
Test Conditions  
Min Typ Max Unit  
ICBO  
VCB = 50V  
0.1  
15  
µA  
µA  
µA  
V
VCB = 50V, TA = +100°C  
Emitter Cutoff Current  
Collector Saturation Voltage  
Base Saturation Voltage  
DC Current Gain  
IEBO  
VEB = 5V  
0.1  
VCE(sat) IB = 3mA, IC = 50mA  
VBE(sat) IB = 3mA, IC = 50mA  
0.30  
0.85  
540  
V
hFE  
VCE = 4.5V, IC = 2mA  
180  

与NTE193A相关器件

型号 品牌 获取价格 描述 数据表
NTE194 NTE

获取价格

Silicon NPN Transistor Audio Power Amplifier
NTE1940 NTE

获取价格

Integrated Circuit Positive Voltage Regulator, 24V, 2A
NTE1942 NTE

获取价格

Integrated Circuit Positive Adjustable Voltage Regulator, 2.85V to 36V, 2A
NTE1951 NTE

获取价格

Integrated Circuit Positive 3 Terminal Voltage Regulator, Low Dropout Voltage, 5V, 1A
NTE1952 NTE

获取价格

Integrated Circuit Positive 3 Terminal Voltage Regulator, Low Dropout Voltage, 8V, 1A
NTE1953 NTE

获取价格

Integrated Circuit Positive 3 Terminal Voltage Regulator, Low Dropout Voltage, 10V, 1A
NTE1954 NTE

获取价格

Integrated Circuit Positive 3 Terminal Voltage Regulator, Low Dropout Voltage, 12V, 1A
NTE1955 NTE

获取价格

Integrated Circuit Positive 3 Terminal Voltage Regulator, Low Dropout Voltage, 15V, 1A
NTE1956 NTE

获取价格

Integrated Circuit Positive 3 Terminal Voltage Regulator, Low Dropout Voltage, 24V, 1A
NTE195A NTE

获取价格

Silicon NPN Transistor RF Power Amp/Driver, CB