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NTE192/A PDF预览

NTE192/A

更新时间: 2024-11-06 23:54:51
品牌 Logo 应用领域
NTE 晶体晶体管
页数 文件大小 规格书
2页 25K
描述
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 500MA I(C) | TO-92VAR

NTE192/A 数据手册

 浏览型号NTE192/A的Datasheet PDF文件第2页 
NTE192 (NPN) & NTE193 (PNP)  
NTE192A (NPN) & NTE193A (PNP)  
Silicon Complementary Transistors  
Audio Power Output  
Description:  
NTE192 (NPN)/NTE193 (PNP) and NTE192A (NPN)/NTE193A (PNP) are silicon complementary  
transistors in a TO92HS type package designed for use in general purpose industrial circuits. These  
devices are especially suited for high level linear amplifiers or medium speed switching circuits in  
industrial control applications.  
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)  
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V  
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V  
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V  
Continuous Collector Current (Note 1), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA  
Total Power Dissipation (TC = +25°C, Note 1), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900mW  
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2mW/°C  
Total Power Dissipation (TA = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 560mW  
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.47mW/°C  
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C  
Lead Temperature (During Soldering, 1/16” ±1/32” from case for 10sec max), TL . . . . . . . . +260°C  
Note 1. Determined from power limitations due to saturation voltage at this current.  
Electrical Characteristics: (TA = +25°C unless otherwise specified)  
Parameter  
DC Characteristics  
Collector Cutoff Current  
Symbol  
Test Conditions  
Min Typ Max Unit  
ICBO  
VCB = 50V  
0.1  
15  
µA  
µA  
µA  
V
VCB = 50V, TA = +100°C  
Emitter Cutoff Current  
Collector Saturation Voltage  
Base Saturation Voltage  
DC Current Gain  
IEBO  
VEB = 5V  
0.1  
VCE(sat) IB = 3mA, IC = 50mA  
VBE(sat) IB = 3mA, IC = 50mA  
0.30  
0.85  
540  
V
hFE  
VCE = 4.5V, IC = 2mA  
180  

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TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 500MA I(C) | TO-92VAR