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NTE189 PDF预览

NTE189

更新时间: 2024-11-19 04:36:03
品牌 Logo 应用领域
NTE 晶体放大器小信号双极晶体管驱动局域网
页数 文件大小 规格书
2页 25K
描述
Silicon Complementary Transistors High Voltage Amplifier & Driver

NTE189 技术参数

生命周期:Active零件包装代码:SFM
包装说明:TO-202N, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.73
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):2 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):50
JEDEC-95代码:TO-202JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:PNP
功耗环境最大值:10 W最大功率耗散 (Abs):10 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

NTE189 数据手册

 浏览型号NTE189的Datasheet PDF文件第2页 
NTE188 (NPN) & NTE189 (PNP)  
Silicon Complementary Transistors  
High Voltage Amplifier & Driver  
Description:  
The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a TO202N type  
package designed for general purpose, high voltage amplifier and driver applications.  
Features:  
D High Collector–Emitter Breakdown Voltage: V(BR)CEO = 80V @ IC = 1mA  
D High Power Dissipation: PD = 10W @ TC = +25°C  
Absolute Maximum Ratings:  
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V  
Collector–Base Voiltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V  
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V  
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A  
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W  
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/°C  
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W  
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/°C  
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C  
Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W  
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5°C/W  
Note 1. RthJA is measured with the device soldered into a typical printed circuit board.  
Electrical Characteristics: (TA = +25°C unless otherwise specified)  
Parameter  
Symbol  
Test Conditions  
Min  
Typ Max Unit  
OFF Characteristics  
Collector–Emitter Breakdown Voltage  
Emitter–Base Breakdown Voltage  
V
I = 1mA, I = 0, Note 2  
80  
4
V
V
(BR)CEO  
C
B
V
I = 100µA, I = 0  
E C  
(BR)EBO  
Collector Cutoff Current  
NTE188  
I
CBO  
V
= 80V, I = 0  
100  
100  
nA  
nA  
CB  
E
NTE189  
V
CB  
= 60V, I = 0  
E
Note 2. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.  

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