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NTE18 PDF预览

NTE18

更新时间: 2024-11-23 10:30:27
品牌 Logo 应用领域
NTE 晶体驱动器小信号双极晶体管放大器
页数 文件大小 规格书
2页 23K
描述
Silicon Complementary Transistors High Voltage, High Current Capacity Driver

NTE18 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.85
Is Samacsys:N最大集电极电流 (IC):0.7 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):120JESD-30 代码:R-PSIP-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:135 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):120 MHz
Base Number Matches:1

NTE18 数据手册

 浏览型号NTE18的Datasheet PDF文件第2页 
NTE18 (NPN) & NTE19 (PNP)  
Silicon Complementary Transistors  
High Voltage, High Current Capacity Driver  
Applications:  
D Drivers for Amplifiers of up to PO = 60W  
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)  
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V  
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V  
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V  
Collector Current, IC  
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700mA  
Pulse (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A  
Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W  
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +135°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +135°C  
Note 1. PW = 20ms, Duty Cycle = 1/2  
Electrical Characteristics: (TA = +25°C unless otherwise specified)  
Parameter  
Symbol  
Test Conditions  
I = 2mA  
Min  
80  
80  
5
Typ Max Unit  
Collector–Emitter Breakdown Voltage  
Collector–Base Breakdown Voltage  
Emitter–Base Breakdown Voltage  
Collector Cutoff Current  
V
V
V
(BR)CEO  
(BR)CBO  
C
V
I = 50µA  
C
V
I = 50µA  
E
V
(BR)EBO  
I
V
CB  
V
EB  
V
CE  
= 50V  
= 4V  
0.5  
0.5  
270  
400  
µA  
µA  
CBO  
Emitter Cutoff Current  
I
EBO  
DC Current Gain  
h
FE  
= 3V, I = 100mA  
120  
C
Collector Saturation Voltage  
V
CE(sat)  
I = 500mA, I = 50mA  
200  
mV  
C
B
Transition Frequency  
NTE18  
V
CE  
= 10V, I = 50mA  
f
T
120  
100  
MHz  
MHz  
C
NTE19  
Output Capacitance  
NTE18  
V
CB  
= 10V, I = 0, f = 1MHz  
C
ob  
10  
14  
pF  
pF  
E
NTE19  
20  

NTE18 替代型号

型号 品牌 替代类型 描述 数据表
2SC5335S PANASONIC

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Small Signal Bipolar Transistor, 0.7A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MT2, 3
2SC5335R PANASONIC

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Small Signal Bipolar Transistor, 0.7A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MT2, 3
2SC5335 PANASONIC

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Silicon NPN epitaxial planer type(For low-frequency output amplification)

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