NTE160
Germanium PNP Transistor
RF–IF Amp, FM Mixer OSC
Description:
The NTE160 is a germanium mesa PNP transistor in a TO72 metal case designed for use as a pream-
plifier mixer and oscillator up to 900MHz.
Absolute Maximum Ratings:
Collector–Emitter Voltage (VBE = 0), VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector–Emitter Voltage, (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Emitter–Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Power Dissipation (TA = +45°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +90°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30° to +75°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400°C/W max
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750°C/W max
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
ICES
Test Conditions
VCE = –20V, VBE = 0
Min
–
Typ
–
Max Unit
Collector Cutoff Current
–8
µA
µA
ICEO
VCE = –15V, IB = 0
–
–
–500
Emitter Cutoff Current
Base–Emitter Voltage
IEBO
VEB = –0.3V, IC = 0
–
–
–100
µA
VBE
IC = –2mA, VCE = –10V
IC = –5mA, VCE = –5V
–
–350
–400
50
–
–
–
–
–
–
6
mV
mV
–
DC Current Gain
hFE
IC = –2mA, VCE = –10V
IC = –5mA, VCE = –5V
–
–
42
Transition Frequency
Reverse Capacitance
Noise Figure
fT
IC = –2mA, VCE = –10V, f = 100MHz
IC = –2mA, VCE = –10V, f = 450kHz
–
700
0.23
5
MHz
pF
–Cre
NF
–
IC = –2mA, VCE = –10V, Rg = 60Ω,
–
dB
f = 800MHz
Power Gain
Gpb
IC = –2mA, VCE = –10V, RL = 2kΩ,
f = 800MHz
11
14
–
dB