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NTE128P PDF预览

NTE128P

更新时间: 2024-11-13 22:44:47
品牌 Logo 应用领域
NTE 晶体放大器小信号双极晶体管开关
页数 文件大小 规格书
2页 24K
描述
Silicon Complementary Transistors General Purpose Amp

NTE128P 技术参数

生命周期:Active零件包装代码:TO-237
包装说明:TO-237, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:2.12
Is Samacsys:N最大集电极电流 (IC):1 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):100JEDEC-95代码:TO-237AA
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

NTE128P 数据手册

 浏览型号NTE128P的Datasheet PDF文件第2页 
NTE128P (NPN) & NTE129P (PNP)  
Silicon Complementary Transistors  
General Purpose Amp  
Description:  
The NTE128P (NPN) and NTE129P (PNP) are silicon complemedntary transistors designed for use  
in general purpose power amplifier and switching applications.  
Features:  
D High VCE Ratings  
D Exceptional Power Dissipation Capability  
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)  
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V  
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V  
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V  
Continuous Collector Current , IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A  
Power Dissipation, PTOT  
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.850W  
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W  
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C  
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C  
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147°C/W  
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W  
Electrical Characteristics: (TA = +25°C unless otherwise specified)  
Parameter  
Symbol  
Test Conditions  
Min Typ Max Unit  
Collector–Emitter Breakdown Voltage BVCEO IC = 10mA, IB = 0  
80  
100  
100  
V
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
ICBO  
IEBO  
hFE  
VCB = 80V  
nA  
nA  
VEB = 4V  
IC = 10mA, VCE = 2V  
IC = 350mA, VCE = 2V  
100  
100  
300  
0.35  
Collector–Emitter Saturation Voltage VCE(sat) IC = 350mA  
V
Current Gain Bandwidth Product  
Output Capacitance  
fT  
IC = 50mA  
50  
Cob  
VCB = 10V, IE = 0, f = 1MHz  
15  
pF  

NTE128P 替代型号

型号 品牌 替代类型 描述 数据表
ZTX550 DIODES

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