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NTE109

更新时间: 2024-11-19 22:44:47
品牌 Logo 应用领域
NTE 整流二极管开关
页数 文件大小 规格书
1页 22K
描述
Germanium Diode Fast Switching General Purpose

NTE109 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:O-LALF-W2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:2.27外壳连接:ISOLATED
配置:SINGLE二极管元件材料:GERMANIUM
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:O-LALF-W2最大非重复峰值正向电流:0.5 A
元件数量:1端子数量:2
最大输出电流:0.06 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.08 W
认证状态:Not Qualified最大重复峰值反向电压:100 V
子类别:Rectifier Diodes表面贴装:NO
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

NTE109 数据手册

  
NTE109  
Germanium Diode  
Fast Switching General Purpose  
Description:  
The NTE109 is a high conductance device with good switching characteristics for low impedance cir-  
cuits, high resistance–high conductance for efficient coupling, clamping and matrix service, and for-  
ward and inverse pulse recovery for critical pulse applications.  
Absolute Maximum Ratings: (TA = +25°C unles otherwise specified)  
Continuous Inverse Operating Voltage (Note 1), Vcont . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V  
Continuous Average Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA  
Peak Recurrent Forward Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 325mA  
Forward Surge Current (1 sec), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA  
Electrical Characteristics:  
Peak Reverse Voltage, PRV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V  
Forward Voltage Drop (IF = 200mA), VF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0V  
Maximum Reverse Leakage (VR = 50V), IR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100µA  
Additional Specifications:  
Ambient Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –78° to +90°C  
Absolute Maximum Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . –78° to +100°C  
Average Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW  
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mW/10°C  
Average Shunt Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5µfd  
Average 100mc Rect. Efficient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55%  
Note 1 The continuous inverse operating voltage rating, Vcont must be reduced when the diode is  
operated at elevated junction temperature. The percent derating of Vcont for each 10°C tem-  
perature increment above 25°C is equal to Vcont/10. For critical high temperature–high volt-  
age applications, is recommended that diodes be 100% tested and specified at the elevated  
temperature.  
Note 2 The peak operating current is generally the controlling factor in AC rectifier service and may  
be exceeded for pulses of less than 200µs duration.  
1.000  
(25.4)  
Min  
.300  
(7.63)  
Typ  
.022 (.509) Dia Max  
.107 (2.72) Dia Max  
Color Band Denotes Cathode  

NTE109 替代型号

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