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NTD60N02R.35G PDF预览

NTD60N02R.35G

更新时间： 2024-09-10 01:09:59
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 85K
描述
Power MOSFET 62 A, 25 V, N−Channel, DPAK

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NTD60N02R.35G 数据手册

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NTD60N02R  
Power MOSFET  
62 A, 25 V, N−Channel, DPAK  
Features  
• Planar HD3e Process for Fast Switching Performance  
http://onsemi.com  
• Low R  
to Minimize Conduction Loss  
DS(on)  
• Low C to Minimize Driver Loss  
iss  
V
R
DS(on)  
TYP  
I MAX  
D
(BR)DSS  
• Low Gate Charge  
25 V  
8.4 mW @ 10 V  
62 A  
• Optimized for High Side Switching Requirements in  
High−Efficiency DC−DC Converters  
• Pb−Free Packages are Available  
N−Channel  
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Drain−to−Source Voltage  
Symbol Value Unit  
G
V
25  
20  
Vdc  
Vdc  
DSS  
Gate−to−Source Voltage − Continuous  
V
GS  
S
4
Thermal Resistance  
Junction−to−Case  
Total Power Dissipation @ T = 25°C  
Drain Current  
R
P
2.6  
58  
°C/W  
q
JC  
4
W
C
D
4
Continuous @ T = 25°C, Chip  
I
I
I
62  
50  
32  
A
A
A
C
D
D
D
Continuous @ T = 25°C, Limited by Package  
C
Continuous @ T = 25°C, Limited by Wires  
A
2
3
1
1
1
2
3
Thermal Resistance  
2
3
Junction−to−Ambient (Note 1)  
Total Power Dissipation @ T = 25°C  
Drain Current − Continuous @ T = 25°C  
R
P
I
80  
1.87  
10.5  
C/W  
W
A
q
JA  
A
D
D
CASE 369AA  
DPAK  
CASE 369AC  
3 IPAK  
CASE 369D  
DPAK  
A
(Surface Mount) (Straight Lead) (Straight Lead)  
Thermal Resistance  
Junction−to−Ambient (Note 2)  
R
P
I
120  
1.25  
8.5  
°C/W  
W
A
STYLE 2  
STYLE 2  
q
JA  
Total Power Dissipation @ T = 25°C  
A
D
D
Drain Current − Continuous @ T = 25°C  
A
MARKING DIAGRAM  
& PIN ASSIGNMENTS  
Operating and Storage Temperature  
T , and −55 to  
°C  
J
T
175  
stg  
4
Single Pulse Drain−to−Source Avalanche Energy  
E
60  
mJ  
AS  
Drain  
− Starting T = 25°C  
J
4
(V = 50 Vdc, V = 10.0 Vdc,  
DD  
GS  
Drain  
I = 11 Apk, L = 1.0 mH, R = 25 W)  
L
G
Maximum Lead Temperature for Soldering  
Purposes, 1/8″ from case for 10 seconds  
T
260  
°C  
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. When surface mounted to an FR4 board using 0.5 in sq drain pad size.  
2. When surface mounted to an FR4 board using the minimum recommended  
pad size.  
2
1
Gate  
3
1
2
3
Drain  
Source  
Gate Drain Source  
Y
WW  
= Year  
= Work Week  
T60N02R = Device Code  
G
= Pb−Free Package  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
December, 2006 − Rev. 12  
NTD60N02R/D  
 
12345678

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NTD60N02R-35 ONSEMI

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 		32A, 25V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3
NTD60N02R-35G ONSEMI

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 		Power MOSFET 62 A, 25 V, N−Channel, DPAK
NTD60N02R-35G ROCHESTER

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 		32A, 25V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369D-01, DPAK-3

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