Datasheet > NTD4969N

NTD4969N

更新时间： 2024-11-06 10:30:31

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	114K
描述
Power MOSFET 30 V, 41 A, Single N?Channel, DPAK/IPAK CPU Power Delivery

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NTD4969N 数据手册

NTD4969N

Power MOSFET

30 V, 41 A, Single N−Channel, DPAK/IPAK

Features

• Low R

to Minimize Conduction Losses

DS(on)

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• Three Package Variations for Design Flexibility

http://onsemi.com

MAX

(BR)DSS

DS(ON)

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

9.0 mW @ 10 V

19 mW @ 4.5 V

Compliant

30 V

41 A

Applications

• CPU Power Delivery

• DC−DC Converters

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

Symbol

Value

Unit

DSS

Continuous Drain

Current R

T = 25°C

12.7

N−CHANNEL MOSFET

T = 100°C

9.0

(Note 1)

Power Dissipation

(Note 1)

T = 25°C

2.56

Continuous Drain

Current R

T = 25°C

9.4

6.6

T = 100°C

Steady

State

(Note 2)

Power Dissipation

(Note 2)

T = 25°C

1.38

CASE 369AC

3 IPAK

(Straight Lead)

CASE 369AA

DPAK

(Bent Lead)

STYLE 2

CASE 369D

IPAK

(Straight Lead

DPAK)

Continuous Drain

Current R

= 25°C

= 100°C

= 25°C

(Note 1)

Power Dissipation

(Note 1)

26.3

MARKING DIAGRAMS

& PIN ASSIGNMENTS

Pulsed Drain

Current

t =10ms

T = 25°C

150

Current Limited by Package

T = 25°C

DmaxPkg

Drain

Operating Junction and Storage

Temperature

T ,

−55 to

+175

°C

Drain

STG

Source Current (Body Diode)

Drain to Source dV/dt

6.0

dV/dt

EAS

V/ns

Single Pulse Drain−to−Source Avalanche

Energy (T = 25°C, V = 24 V, V = 10 V,

I = 19 A , L = 0.1 mH, R = 25 W)

Drain

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

260

°C

Gate Drain Source

Gate Source

Gate Drain Source

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

= Year

= Work Week

4969N = Device Code

= Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

Publication Order Number:

April, 2011 − Rev. 1

NTD4969N/D

12 3 4 5 6 7

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与NTD4969N相关器件

型号	品牌	获取价格	描述	数据表
NTD4969N-1G	ONSEMI	获取价格	Power MOSFET 30 V, 41 A, Single N?Channel, DPAK/IPAK CPU Power Delivery
NTD4969N-35G	ONSEMI	获取价格	Power MOSFET 30 V, 41 A, Single N?Channel, DPAK/IPAK CPU Power Delivery
NTD4969NT4G	ONSEMI	获取价格	Power MOSFET 30 V, 41 A, Single N?Channel, DPAK/IPAK CPU Power Delivery
NTD4970N	ONSEMI	获取价格	Power MOSFET 30 V, 36 A, Single NâChannel,
NTD4970N-1G	ONSEMI	获取价格	30 V, 36 A, Single N.Channel, DPAK/IPAK
NTD4970N-35G	ONSEMI	获取价格	30 V, 36 A, Single NâChannel, DPAK/IPAK
NTD4970NT4G	ONSEMI	获取价格	单 N 沟道，功率 MOSFET，30V，36A，11mΩ
NTD4979N-1G	ONSEMI	获取价格	POWER, FET
NTD4979N-35G	ONSEMI	获取价格	POWER, FET
NTD4979NT4G	ONSEMI	获取价格	POWER, FET

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