NTD3055-150T4G

更新时间： 2024-01-21 15:45:05

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	71K
描述
Power MOSFET 9.0 A, 60 V

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替代型号

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NTD3055-150T4G 数据手册

NTD3055−150

Power MOSFET 9.0 A, 60 V

N−Channel DPAK

Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls and bridge

circuits.

http://onsemi.com

Features

9.0 AMPERES, 60 VOLTS

• Pb−Free Packages are Available

R_DS(on)= 122 mW (Typ)

Typical Applications

N−Channel

• Power Supplies

• Converters

• Power Motor Controls

• Bridge Circuits

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

MARKING

DIAGRAMS

Drain−to−Source Voltage

Vdc

DSS

Drain−to−Gate Voltage (R = 10 MW)

DGR

Gate−to−Source Voltage

− Continuous

"20

"30

Drain

− Non−repetitive (t v10 ms)

Drain Current

Adc

Apk

DPAK

CASE 369C

STYLE 2

9.0

3.0

− Continuous @ T = 25°C

− Continuous @ T = 100°C

− Single Pulse (t v10 ms)

“SURFACE MOUNT”

Total Power Dissipation @ T = 25°C

Derate above 25°C

28.8

0.19

2.1

W/°C

Gate

Drain

Source

Total Power Dissipation @ T = 25°C (Note 1)

1.5

Total Power Dissipation @ T = 25°C (Note 2)

Operating and Storage Temperature Range

T , T

−55 to

175

°C

Drain

stg

DPAK−3

CASE 369D

STYLE 2

Single Pulse Drain−to−Source Avalanche

Energy − Starting T = 25°C

(V = 25 Vdc, V = 10 Vdc,

“STRAIGHT LEAD”

L = 1.0 mH, I (pk) = 7.75 A, V = 60 Vdc)

Thermal Resistance

− Junction−to−Case

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

°C/W

5.2

71.4

100

Gate Drain Source

Maximum Lead Temperature for Soldering

260

°C

3150

Device Code

= Assembly Location

= Year

Purposes, 1/8″ from case for 10 seconds

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

1. When surface mounted to an FR4 board using 0.5 sq in pad size.

2. When surface mounted to an FR4 board using minimum recommended

pad size.

= Work Week

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

August, 2004 − Rev. 4

NTD3055−150/D

12 3 4 5 6 7 8

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NTD3055-150T4G 替代型号

型号	品牌	替代类型	描述	数据表
NTD3055-094T4G	ONSEMI	类似代替	Power MOSFET 12 A, 60 V
NTD3055-094G	ONSEMI	类似代替	Power MOSFET 12 A, 60 V
NTD3055-150	ONSEMI	类似代替	Power MOSFET 9.0 A, 60 V

与NTD3055-150T4G相关器件

型号	品牌	获取价格	描述	数据表
NTD3055-150T4H	ONSEMI	获取价格	9A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE, PLASTIC, CASE 369C, DPAK-3/2
NTD3055L104	ONSEMI	获取价格	Power MOSFET
NTD3055L104/D	ETC	获取价格	Power MOSFET 12 Amps， 60 Volts， Logic Level
NTD3055L104-001	ONSEMI	获取价格	单 N 沟道逻辑电平功率 MOSFET 60V，12A，104mΩ
NTD3055L104-1	ONSEMI	获取价格	Power MOSFET
NTD3055L104-1G	ONSEMI	获取价格	Power MOSFET
NTD3055L104G	ONSEMI	获取价格	Power MOSFET
NTD3055L104T4	ONSEMI	获取价格	Power MOSFET
NTD3055L104T4G	ONSEMI	获取价格	Power MOSFET
NTD3055L104T4G	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时

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