Datasheet > NT6AP512T32AV-J2NA

NT6AP512T32AV-J2NA

更新时间： 2024-11-08 02:45:23

品牌	Logo	应用领域
南亚科技 - NANYA		动态存储器双倍数据速率光电二极管
页数	文件大小	规格书
328页	11988K
描述
Commercial Mobile LPDDR4 X 8 Gb/ 16 Gb DDP)/32Gb(QDP) SDRAM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NT6AP512T32AV-J2NA 数据手册

浏览型号NT6AP512T32AV-J2NA的Datasheet PDF文件第2页

浏览型号NT6AP512T32AV-J2NA的Datasheet PDF文件第3页

浏览型号NT6AP512T32AV-J2NA的Datasheet PDF文件第4页

浏览型号NT6AP512T32AV-J2NA的Datasheet PDF文件第5页

浏览型号NT6AP512T32AV-J2NA的Datasheet PDF文件第6页

浏览型号NT6AP512T32AV-J2NA的Datasheet PDF文件第7页

NTC Proprietary

Level: Property

Preliminary, Subject to change

LPDDR4X 8Gb/16Gb(DDP)/32Gb(QDP) SDRAM

8Gb: NT6AP512M16AV/16Gb: NT6AP512T32AV

32Gb: NT6AP1024F32AV

Commercial Mobile LPDDR4X 8Gb/16Gb(DDP)/32Gb(QDP) SDRAM

Features

 Data Integrity

 Basis LPDDR4X Compliant

- Low Power Consumption

- DRAM built-in Temperature Sensor for

Temperature Compensated Self Refresh (TCSR)

- 16n Prefetch Architecture and BL16, BL32 (OTF)

- Auto Refresh and Self Refresh Modes

 Power Saving Modes

 Signal Integrity

- Internal VREF and VREF Training

- Configurable DS for system compatibility

- Configurable On-Die Termination

- Partial Array Self Refresh (PASR)

- Frequency Set Point(WR/OP)

- ZQ Calibration for DS/ODT impedance accuracy via

external ZQ pad (240Ω± 1%)

- Clock-stop capability

 LVSTL interface and Power Supply

- VDD1/VDD2/VDDQ = 1.8V/1.1V/0.6V

- Data bus inversion (DBI)

 Training for Signals’ Synchronization

- DQ Calibration offering specific DQ output patterns

Programmable

 RL/WL Select (Set A / Set B)

 nWR (X16 mode / X8 Byte mode)

 PASR (bank/segment)

 R_ON(Typical:40/48/60/80/120/240)

 R_TT(40/48/60/80/120/240)

Options

 Speed Grade (DataRate)

 Temperature Range (Tc)

- Commercial Grade : - 30℃ to +85℃, extending 105℃²

-4267 Mbps / RL=36

-3733 Mbps / RL=32

-3200 Mbps / RL=28

 Package Information

 Density and Addressing

Lead-free RoHS compliance and Halogen-free

Items

Width x Length x Height

(mm)

Ball pitch

(mm)

Items

X16_1CH X16_2CH X16_2CH

(FBGA Package)

Die Quantity

Number of Banks

Bank Address

Row

Single Die Dual Die

Quad Die

0.65/0.80

Mixed

200 Ball

(SDP/DDP)

10.00 x 15.00 x 0.83

10.00 x 15.00 x 1.05

BA[2:0]

R[15:0]

C[9:0]

BA[2:0]

R[15:0]

C[9:0]

3.9μs

BA[2:0]

R[15:0]

C[9:0]

Column

0.65/0.80

Mixed

Tc≦85℃

200 Ball

(QDP)

tREFI ¹85℃<Tc≦95℃

95℃<Tc≦105℃

1.95μs

0.975μs

Notes:

tREFI values for all bank refresh is within temperature specification (<= 85℃)

AC/DC will be derated when above 85℃.

Version 1.2

Nanya Technology Corp.

NTC has the rights to change any specifications or product without notification.

09/2018

12 3 4 5 6 7...328

中文翻译

下载PDF

与NT6AP512T32AV-J2NA相关器件

型号	品牌	获取价格	描述	数据表
NT6AP512T32AV-J3	NANYA	获取价格	Commercial Mobile LPDDR4 X 8 Gb/ 16 Gb DDP)/32Gb(QDP) SDRAM
NT6AP512T32AV-J3NA	NANYA	获取价格	Commercial Mobile LPDDR4 X 8 Gb/ 16 Gb DDP)/32Gb(QDP) SDRAM
NT6CL1024F32A4-H0NA	NANYA	获取价格	Commercial Mobile LPDDR3 32Gb(QDP) SDRAM
NT6CL1024F32A4-H1NA	NANYA	获取价格	Commercial Mobile LPDDR3 32Gb(QDP) SDRAM
NT6CL1024F32AP	NANYA	获取价格	Commercial Mobile LPDDR3 32Gb(QDP) SDRAM
NT6CL1024F32AP-H0	NANYA	获取价格	Commercial Mobile LPDDR3 32Gb(QDP) SDRAM
NT6CL1024F32AP-H0NA	NANYA	获取价格	Commercial Mobile LPDDR3 32Gb(QDP) SDRAM
NT6CL1024F32AP-H1	NANYA	获取价格	Commercial Mobile LPDDR3 32Gb(QDP) SDRAM
NT6CL1024F32AP-H1NA	NANYA	获取价格	Commercial Mobile LPDDR3 32Gb(QDP) SDRAM
NT6CL1024F32AR-H0NA	NANYA	获取价格	Commercial Mobile LPDDR3 32Gb(QDP) SDRAM

与NT6AP512T32AV-J2NA相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

19
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

16
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

39
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

37

产品中心

服务支持

精选活动

关于我们

帮助中心

NT6AP512T32AV-J2NA

NT6AP512T32AV-J2NA 数据手册

与NT6AP512T32AV-J2NA相关器件

与NT6AP512T32AV-J2NA相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NT6AP512T32AV-J2NA

NT6AP512T32AV-J2NA 数据手册

与NT6AP512T32AV-J2NA相关器件

与NT6AP512T32AV-J2NA相关文章

您还可以找

您在本页遇到什么问题？