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NSVT489AMT1G PDF预览

NSVT489AMT1G

更新时间： 2024-11-04 12:27:39
品牌 Logo 应用领域
安森美 - ONSEMI 晶体开关晶体管便携式
页数 文件大小 规格书
4页 144K
描述
High Current Surface Mount NPN Silicon Low VCE(sat) Switching Transistor for Load Management in Portable Applications

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NSVT489AMT1G 数据手册

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NST489AMT1,  
NSVT489AMT1G  
High Current Surface Mount  
NPN Silicon Low VCE(sat)  
Switching Transistor for  
Load Management in  
http://onsemi.com  
30 VOLTS, 3.0 AMPS  
NPN TRANSISTOR  
Portable Applications  
Features  
AEC−Q101 Qualified and PPAP Capable  
NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements  
Pb−Free Packages are Available*  
TSOP−6  
CASE 318G  
STYLE 6  
COLLECTOR  
1, 2, 5, 6  
MAXIMUM RATINGS (T = 25C)  
A
Rating  
Symbol  
Max  
30  
Unit  
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
V
CEO  
V
CBO  
V
EBO  
3
BASE  
50  
V
5.0  
2.0  
3.0  
V
4
Collector Current − Continuous  
Collector Current − Peak  
I
C
A
EMITTER  
I
A
CM  
DEVICE MARKING  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation  
P
D
(Note 1)  
N2 M G  
T = 25C  
535  
4.3  
mW  
mW/C  
G
A
Derate above 25C  
Thermal Resistance,  
Junction−to−Ambient  
R
(Note 1)  
C/W  
q
JA  
234  
N2 = Specific Device Code  
Total Device Dissipation  
P
D
(Note 2)  
M
= Date Code*  
T = 25C  
1.180  
9.4  
W
mW/C  
A
G
= Pb−Free Package  
Derate above 25C  
(Note: Microdot may be in either location)  
Thermal Resistance,  
Junction−to−Ambient  
R
(Note 2)  
C/W  
q
JA  
*Date Code orientation may vary depending upon  
manufacturing location.  
106  
Thermal Resistance,  
Junction−to−Lead #1  
R
R
(Note 1)  
(Note 2)  
110  
50  
C/W  
C/W  
q
JL  
JL  
q
ORDERING INFORMATION  
Total Device Dissipation  
(Single Pulse < 10 s)  
P
W
Dsingle  
†
Device  
Package  
Shipping  
(Notes 2 and 3)  
1.75  
NST489AMT1  
TSSOP−6  
3,000 /  
Tape & Reel  
Junction and Storage  
Temperature Range  
T , T  
−55 to +150  
C  
J
stg  
NST489AMT1G  
TSSOP−6  
(Pb−Free)  
3,000 /  
Tape & Reel  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
NSVT489AMT1G TSSOP−6  
(Pb−Free)  
3,000 /  
Tape & Reel  
2
1. FR−4 with 1 oz and 3.9 mm of copper area.  
2
2. FR−4 with 1 oz and 645 mm of copper area.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
3. Refer to Figure 8.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
November, 2011 − Rev. 8  
NST489AMT1/D  
 
1234

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NSVT489AMT1G 替代型号

型号 品牌 替代类型 描述 数据表
NSS30201MR6T1G ONSEMI

完全替代

 High Efficiency DC-DC Converters
SNSS30201MR6T1G ONSEMI

类似代替

 30 V, 2.0 A NPN Low VCE(sat) Bipolar Junction Transistor
NST489AMT1G ONSEMI

类似代替

 High Current Surface Mount NPN Silicon Low VCE(sat) Switching Transistor for Load Manageme

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