Datasheet > 晶体管 > 小信号双极晶体管> NSVT3906DXV6T1G

NSVT3906DXV6T1G

更新时间： 2024-09-24 11:01:35

品牌	Logo	应用领域
安森美 - ONSEMI		小信号双极晶体管
页数	文件大小	规格书
8页	103K
描述
双 PNP 双极晶体管

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NSVT3906DXV6T1G 数据手册

NST3906DXV6T1,

NST3906DXV6T5

Dual General Purpose

Transistor

The NST3906DXV6T1 device is a spin- off of our popular

SOT-23/SOT-323 three-leaded device. It is designed for general

purpose amplifier applications and is housed in the SOT- 563

six-leaded surface mount package. By putting two discrete devices in

one package, this device is ideal for low-power surface mount

applications where board space is at a premium.

http://onsemi.com

(3)

(2)

(1)

• h , 100-300

• Low V , ≤ 0.4 V

CE(sat)

• Simplifies Circuit Design

• Reduces Board Space

(4)

(5)

(6)

NST3906DXV6T1

• Reduces Component Count

• Lead-Free Solder Plating

MAXIMUM RATINGS

Rating

Symbol

Value

-40

Unit

Vdc

mAdc

Collector- Emitter Voltage

Collector- Base Voltage

Emitter- Base Voltage

Collector Current - Continuous

Electrostatic Discharge

CEO

CBO

EBO

SOT-563

CASE 463A

PLASTIC

-40

-5.0

-200

MARKING DIAGRAM

ESD

HBM>16000,

MM>2000

A2 D

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

A2 = Specific Device Code

= Date Code

Symbol

Max

Unit

Total Device Dissipation

T = 25°C

357

(Note 1)

2.9

Derate above 25°C

mW/°C

°C/W

(Note 1)

ORDERING INFORMATION

Thermal Resistance

Junction-to-Ambient

350

(Note 1)

Device

Package

Shipping

NST3906DXV6T1 SOT-563

4 mm pitch

4000/Tape & Reel

Characteristic

(Both Junctions Heated)

Symbol

Max

Unit

NST3906DXV6T5 SOT-563

2 mm pitch

8000/Tape & Reel

Total Device Dissipation

T = 25°C

500

(Note 1)

4.0

Derate above 25°C

mW/°C

°C/W

°C

(Note 1)

Thermal Resistance

Junction-to-Ambient

250

(Note 1)

Junction and Storage

Temperature Range

T , T

- 55 to +150

stg

1. FR-4 @ Minimum Pad

Semiconductor Components Industries, LLC, 2003

Publication Order Number:

March, 2003 - Rev. 0

NST3906DXV6T1/D

12 3 4 5 6 7 8

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