Bipolar Transistor
160 V, 1.5 A, Low VCE(sat) NPN Single
LFPAK
Product Preview
NST1602CLT
This device is bipolar junction transistor featuring high current, low
saturation voltage, and high speed switching.
Suitable for automotive applications. AEC−Q101 qualified and
PPAP capable.
www.onsemi.com
Features
• Complement to NST1601CLT
• Large Current Capacitance
LFPAK8 3.3x3.3, 0.65P
CASE 760AD
• Low Collector to Emitter Saturation Voltage
• Thin Profile LFPAK8 3.3 x 3.3 mm Package
• High−Speed Switching
ELECTRICAL CONNECTION
• High Allowable Power Dissipation
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Load Switch
• Gate Driver Buffer
• DC−DC Converters
MARKING DIAGRAM
XXXXX
XXXXX
Specifications
AWLYWG
ABSOLUTE MAXIMUM RATING at Ta = 25°C
Parameter
Symbol
Value
Unit
V
XXXX = Specific Device Code
A
= Assembly Location
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
V
CBO
V
CEO
V
EBO
180
WL = Wafer Lot
160
V
Y
= Year
6
V
W
G
= Work Week
= Pb−Free Package
I
C
1.5
A
Collector Current (Pulse)
Collector Dissipation (Note 1)
I
3
A
CP
P
1
15
W
C
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
PC (Tc = 25°C)
Junction Temperature
Storage Temperature
Tj
175
°C
°C
Tstg
−55 to +175
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR board
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
February, 2020 − Rev. P0
NST1602CLT/D