DATA SHEET
www.onsemi.com
Bipolar Transistor
-160 V, -1.5 A, Low VCE(sat) PNP
Single LFPAK
LFPAK8 3.3x3.3, 0.65P
CASE 760AD
NST1601CL
ELECTRICAL CONNECTION
This device is bipolar junction transistor featuring high current, low
saturation voltage, and high speed switching.
C 5, 6, 7, 8
Suitable for automotive applications. AEC−Q101 qualified and
PPAP capable. (NSVT1601CLTWG)
Features
• Complement to NST1602CL
• Large Current Capacitance
B 4 E 1, 2, 3
• Low Collector to Emitter Saturation Voltage
• Thin Profile LFPAK8 3.3 x 3.3 mm Package
• High−Speed Switching
MARKING DIAGRAM
NST
1601G
AWLYW
• High Allowable Power Dissipation
• AEC−Q101 Qualified and PPAP Capable (NSVT1601CLTWG)
NST1601
= Specific Device Code
= Assembly Location
= Wafer Lot
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
A
WL
Y
W
G
Compliant
= Year
= Work Week
= Pb−Free Package
Typical Applications
• Load Switch
• Gate Driver Buffer
• DC−DC Converters
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Specifications
ABSOLUTE MAXIMUM RATING at Ta = 25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Symbol
Value
−180
−160
−6
Unit
V
V
CBO
V
CEO
V
EBO
V
V
I
C
−1.5
A
Collector Current (Pulse)
Collector Dissipation
I
−2.5
A
CP
P
P
(Note 1)
(Note 2)
Tj
0.8
W
C
2.2
C
Junction Temperature
Storage Temperature
175
°C
°C
Tstg
−55 to +175
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Mounted on FRB with minimum pad of Copper 2 oz
2. Mounted on FRB with 1 in/sq pad of Copper 2 oz
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
February, 2022 − Rev. 4
NST1601CL/D