Datasheet > NSR10404NXT5G

NSR10404NXT5G

更新时间： 2024-11-01 11:15:31

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	128K
描述
肖特基势垒整流器，1 A，40 V

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NSR10404NXT5G 数据手册

NSR10404NXT5G

1 A, 40 V, Schottky Barrier

Diode

These Schottky barrier diodes are optimized for low forward

voltage drop and low leakage current and are offered in a Chip Scale

Package (CSP) to reduce board space. The low thermal resistance

enables designers to meet the challenging task of achieving higher

efficiency and meeting reduced space requirements.

www.onsemi.com

MARKING

DIAGRAM

Features

• Low Forward Voltage Drop − 500 mV (Typ.) @ I = 1.0 A

PIN 1

• Low Reverse Current − 10 mA (Typ.) @ V = 40 V

• 1.0 A of Continuous Forward Current

4NM

DSN2

(0402)

• ESD Rating − Human Body Model: Class 3B

ESD Rating − Machine Model: Class C

• High Switching Speed

CASE 152AE

= Specific Device Code

= Year Code

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

PIN CONNECTIONS

Typical Applications

• LCD and Keypad Backlighting

• Camera Photo Flash

CATHODE

ANODE

• Buck and Boost dc−dc Converters

• Reverse Voltage and Current Protection

• Clamping & Protection

ORDERING INFORMATION

Device

NSR10404NXT5G

Package

Shipping†

5000 / Tape & Reel

MAXIMUM RATINGS

DSN2

Rating

Symbol

Value

Unit

(Pb−Free)

Reverse Voltage

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Forward Current (DC)

Forward Surge Current

1.0

FSM

(60 Hz @ 1 cycle)

Repetitive Peak Forward Current

2.5

FRM

(Pulse Wave = 1 sec, Duty Cycle = 66%)

ESD Rating:

Human Body Model

Machine Model

ESD

> 8

> 400

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

Publication Order Number:

July, 2016 − Rev. 1

NSR10404/D

12 3 4 5 6

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