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NSR1030QMUTWG PDF预览

NSR1030QMUTWG

更新时间： 2024-09-14 11:15:31
品牌 Logo 应用领域
安森美 - ONSEMI PC二极管
页数 文件大小 规格书
5页 148K
描述
1.0 A, 30 V, Schottky Diode Full Bridge Rectifier

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中文翻译

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NSR1030QMUTWG 技术参数

是否无铅：不含铅生命周期：Active
Reach Compliance Code：compliantFactory Lead Time：7 weeks
风险等级：1.53Samacsys Confidence：2
Samacsys Status：ReleasedSamacsys PartID：914044
Samacsys Pin Count：4Samacsys Part Category：Schottky Diode
Samacsys Package Category：OtherSamacsys Footprint Name：UDFN4 3.0x3.0, 1.30P CASE 517DB ISSUE A
Samacsys Released Date：2018-12-21 09:33:16Is Samacsys：N
二极管类型：BRIDGE RECTIFIER DIODE峰值回流温度（摄氏度）：NOT SPECIFIED
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

NSR1030QMUTWG 数据手册

 浏览型号NSR1030QMUTWG的Datasheet PDF文件第2页浏览型号NSR1030QMUTWG的Datasheet PDF文件第3页浏览型号NSR1030QMUTWG的Datasheet PDF文件第4页浏览型号NSR1030QMUTWG的Datasheet PDF文件第5页 
NSR1030QMUTWG  
Schottky Full Bridge, 1A, 30V  
These full bridge Schottky barrier diodes are designed for the  
rectification of the high speed signal of wireless charging. The  
NSR1030QMUTWG has a very low forward voltage that will reduce  
conduction loss. It is housed in a UDFN 3.0 x 3.0 x 0.5 mm package  
that is ideal for space constrained wireless applications.  
www.onsemi.com  
Features  
• Extremely Fast Switching Speed  
MARKING  
DIAGRAM  
• Low Forward Voltage − 0.49 V (Typ) @ I = 1 A  
F
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant  
1
1030  
AYWWG  
G
UDFN4 3x3  
CASE 517DB  
Typical Applications  
• Low Voltage Full Bridge Rectification & Wireless Charging  
MAXIMUM RATINGS (T = 125°C unless otherwise noted) (Note 1)  
J
1030  
A
Y
= Specific Device Code  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
Rating  
Symbol  
Value  
30  
Unit  
V
Reverse Voltage  
V
R
WW  
G
Forward Current (DC)  
I
F
1.0  
A
(Note: Microdot may be in either location)  
Forward Current Surge Peak  
(60 Hz, 1 cycle)  
I
I
12  
A
FSM  
Non−Repetitive Peak Forward Current  
A
FSM  
PIN CONNECTIONS  
(Square Wave, T = 25°C prior to surge)  
J
t = 1 ms  
t = 1 ms  
t = 1 s  
40  
10  
3.0  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. All specifications pertain to a single diode.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation  
P
1.80  
W
D
DEVICE SCHEMATIC  
T = 25°C  
(Note 2)  
A
Derate above 25°C  
18  
mW/°C  
°C/W  
Thermal Resistance Junction to Ambient  
R
55.5  
q
JA  
(Note 2)  
Total Device Dissipation  
P
D
0.70  
W
T = 25°C  
Derate above 25°C  
(Note 3)  
A
7.0  
mW/°C  
°C/W  
Thermal Resistance Junction to Ambient  
R
142  
q
JA  
(Note 3)  
Total Device Dissipation  
P
0.80  
W
D
ORDERING INFORMATION  
T = 25°C  
(Note 4)  
A
Derate above 25°C  
8.0  
mW/°C  
°C/W  
Device  
Package  
Shipping†  
Thermal Resistance Junction to Ambient  
R
125  
q
JA  
NSR1030QMUTWG  
UDFN4  
(Pb−Free)  
3000 / Tape &  
Reel  
(Note 4)  
Junction Temperature  
T
+125  
°C  
°C  
J
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Storage Temperature Range  
T
stg  
−55 to  
+150  
2
2. 4 Layer JEDEC JESD51.7 FR−4 @ 10 mm , 1 oz. copper trace, still air.  
3. Single Layer JEDEC JESD51.3 FR−4 @ 100 mm , 1 oz. copper trace, still air.  
4. Single Layer JEDEC JESD51.3 FR−4 @ 100 mm , 2 oz. copper trace, still air.  
2
2
© Semiconductor Components Industries, LLC, 2015  
Publication Order Number:  
May, 2017 − Rev. 1  
NSR1030QMU/D  
 
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