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NSR1030QMUTAG

更新时间： 2024-09-13 21:10:15
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 72K
描述
Schottky Diodes Full Bridge 30V 1A, 3000-REEL

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中文翻译

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NSR1030QMUTAG 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：End Of LifeReach Compliance Code：compliant
Factory Lead Time：6 weeks 4 days风险等级：5.7
Base Number Matches：1

NSR1030QMUTAG 数据手册

 浏览型号NSR1030QMUTAG的Datasheet PDF文件第2页浏览型号NSR1030QMUTAG的Datasheet PDF文件第3页浏览型号NSR1030QMUTAG的Datasheet PDF文件第4页 
NSR1030QMUTWG  
1A, 30V Schottky Full Bridge  
These full bridge Schottky barrier diodes are designed for the  
rectification of the high speed signal of wireless charging. The  
NSR1030QMUTWG has a very low forward voltage that will reduce  
conduction loss. It is housed in a UDFN 3.0 x 3.0 x 0.5 mm package  
that is ideal for space constrained wireless applications.  
www.onsemi.com  
Features  
• Extremely Fast Switching Speed  
MARKING  
DIAGRAM  
• Low Forward Voltage − 0.49 V (Typ) @ I = 1 A  
F
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant  
1
1030  
AYWWG  
G
UDFN4 3x3  
CASE 517DB  
Typical Applications  
• Low Voltage Full Bridge Rectification & Wireless Charging  
MAXIMUM RATINGS (T = 125°C unless otherwise noted) (Note 1)  
J
1030  
A
Y
= Specific Device Code  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
Rating  
Symbol  
Value  
30  
Unit  
V
Reverse Voltage  
V
R
WW  
G
Forward Current (DC)  
I
F
1.0  
A
(Note: Microdot may be in either location)  
Forward Current Surge Peak  
(60 Hz, 1 cycle)  
I
I
12  
A
FSM  
Non−Repetitive Peak Forward Current  
A
FSM  
PIN CONNECTIONS  
(Square Wave, T = 25°C prior to surge)  
J
t = 1 ms  
t = 1 ms  
t = 1 s  
40  
10  
3.0  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. All specifications pertain to a single diode.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation  
P
1.80  
W
D
DEVICE SCHEMATIC  
T = 25°C  
(Note 2)  
A
Derate above 25°C  
18  
mW/°C  
°C/W  
Thermal Resistance Junction to Ambient  
R
55.5  
q
JA  
(Note 2)  
Total Device Dissipation  
P
D
0.70  
W
T = 25°C  
Derate above 25°C  
(Note 3)  
A
7.0  
mW/°C  
°C/W  
Thermal Resistance Junction to Ambient  
R
142  
q
JA  
(Note 3)  
Total Device Dissipation  
P
0.80  
W
D
ORDERING INFORMATION  
T = 25°C  
(Note 4)  
A
Derate above 25°C  
8.0  
mW/°C  
°C/W  
Device  
Package  
Shipping†  
Thermal Resistance Junction to Ambient  
R
125  
q
JA  
NSR1030QMUTWG  
UDFN4  
(Pb−Free)  
3000 / Tape &  
Reel  
(Note 4)  
Junction Temperature  
T
+125  
°C  
°C  
J
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Storage Temperature Range  
T
stg  
−55 to  
+150  
2
2. 4 Layer JEDEC JESD51.7 FR−4 @ 10 mm , 1 oz. copper trace, still air.  
3. Single Layer JEDEC JESD51.3 FR−4 @ 100 mm , 1 oz. copper trace, still air.  
4. Single Layer JEDEC JESD51.3 FR−4 @ 100 mm , 2 oz. copper trace, still air.  
2
2
© Semiconductor Components Industries, LLC, 2015  
Publication Order Number:  
May, 2017 − Rev. 1  
NSR1030QMU/D  
 
1234

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