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NSR1030MW2T3G PDF预览

NSR1030MW2T3G

更新时间： 2024-09-14 01:17:23
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
3页 47K
描述
Schottky Barrier Diodes

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NSR1030MW2T3G 数据手册

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NSR1030MW2T1G  
Product Preview  
Schottky Barrier Diodes  
This Schottky Barrier Diode in the SOD−323 package offers  
extremely low Vf performance. The low forward voltage makes them  
capable of handling high current in a very small package. The  
resulting device is ideally suited for application as a blocking diode in  
charging applications or as part of discrete buck converter or discrete  
boost converter. As part of a buck conversion circuit, a boost  
conversion circuit or a charging circuit the low Vf drop of the schottky  
improves the efficiency of the overall device by consuming less power  
in the forward mode.  
http://onsemi.com  
HIGH CURRENT  
SCHOTTKY BARRIER DIODE  
Features  
• Low Forward Voltage − 0.24 V (Typ) @ I = 10 mAdc  
F
1
2
• High Current Capability  
CATHODE  
ANODE  
• ESD Rating − Human Body Model: Class 3B  
− Machine Model: C  
2
MARKING  
DIAGRAM  
• These are Pb−Free Devices  
1
MAXIMUM RATINGS (T = 125°C unless otherwise noted)  
J
RF MG  
SOD−323  
CASE 477  
STYLE 1  
Rating  
Reverse Voltage  
Symbol  
Value  
30  
Unit  
Vdc  
V
G
V
R
Peak Revese Voltage  
V
30  
RM  
RF = Specific Device Code  
Forward Power Dissipation  
P
F
M
G
= Date Code  
= Pb−Free Package  
@ T = 25°C  
200  
2.0  
mW  
mW/°C  
A
Derate above 25°C  
(Note: Microdot may be in either location)  
Forward Current (DC)  
Continuous  
I
A
A
F
1
Forward Current  
I
ORDERING INFORMATION  
F
t = 8.3 ms Half Sinewave  
5
Device  
Package  
Shipping†  
Junction Temperature  
T
125 Max  
−55 to +150  
°C  
°C  
J
NSR1030MW2T1G SOD−323 3000/Tape & Reel  
(Pb−Free)  
Storage Temperature Range  
T
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
NSR1030MW2T3G SOD−323 10,000/Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
This document contains information on a product under development. ON Semiconductor  
reserves the right to change or discontinue this product without notice.  
©
Semiconductor Components Industries, LLC, 2006  
Publication Order Number:  
December, 2006 − Rev. P1  
NSR1030MW2/D  
123

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