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NSPM5131MUTBG PDF预览

NSPM5131MUTBG

更新时间: 2024-11-28 01:18:59
品牌 Logo 应用领域
安森美 - ONSEMI 局域网测试光电二极管
页数 文件大小 规格书
4页 69K
描述
Unidirectional ESD

NSPM5131MUTBG 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:R-PDSO-N6Reach Compliance Code:compliant
Factory Lead Time:1 week风险等级:1.58
最大击穿电压:17.5 V最小击穿电压:13.6 V
击穿电压标称值:15.5 V最大钳位电压:21.5 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:R-PDSO-N6
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:6
最高工作温度:125 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL参考标准:IEC-61000-4-2, 4-5
最大重复峰值反向电压:13.5 V最大反向电流:1 µA
反向测试电压:13.5 V表面贴装:YES
技术:AVALANCHE端子面层:Tin (Sn)
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

NSPM5131MUTBG 数据手册

 浏览型号NSPM5131MUTBG的Datasheet PDF文件第2页浏览型号NSPM5131MUTBG的Datasheet PDF文件第3页浏览型号NSPM5131MUTBG的Datasheet PDF文件第4页 
NSPM5131  
13.5 V Unidirectional ESD  
and Surge Protection Device  
Features  
Unidirectional High Voltage ESD Protection  
Provides ESD Protection to IEC61000−4−2 Level 4:  
30 kV Contact Discharge  
www.onsemi.com  
IEC 61000−4−5 (lighting)  
High Voltage Zener Diode Protects Supply Rail up to 160 A (8/20 ms)  
These Devices are Pb−Free and are RoHS Compliant  
UDFN6  
CASE 517CS  
APPLICATION DIAGRAM  
Vcc (1)  
BLOCK DIAGRAM  
Cathode  
Anode  
GND (6)  
DAP**  
MARKING DIAGRAM  
GND (5)  
A3 M  
G
1
A3 = Specific Device Code  
M
= Date Code  
**Die Attach Pad on  
back of package  
G
= Pb−Free Package  
(connect to ground)  
ORDERING INFORMATION  
Device  
NSPM5131MUTBG  
Package  
Shipping  
UDFN6  
(Pb−Free)  
3000/Tape &  
Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
November, 2016 − Rev. 1  
NSPM5131/D  

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