Datasheet > NSI8100N

NSI8100N

更新时间： 2024-04-09 18:58:41

品牌	Logo	应用领域
纳芯微 - NOVOSENSE		时钟
页数	文件大小	规格书
23页	2813K
描述
NSi8100x系列是高可靠性的双向l2C数字隔离器。提供符合UL1577的多种电气隔离耐压(3.75kVrms, 5kVrms)，且具有高电磁抗扰度和低辐射的特性。支持I2C时钟高达2MHZ，共

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NSI8100N 数据手册

NSi8100

High Reliability Bidirectional I²C Isolators

Datasheet (EN) 2.4

Safety Regulatory Approvals

Product Overview

The NSi8100 devices are high reliability bidirectional

isolators that are compatible with I²C interface. The

NSi8100 devices are safety certified by UL1577 support

several insulation withstand voltages (3.75kV_rms, 5kV_rms),

while providing high electromagnetic immunity and low

emissions at low power consumption. The I²C clock of

the NSi8100 is up to 2MHz, and the common-mode

transient immunity (CMTI) is up to 150kV/us. Wide supply

voltage of the NSi8100 device support to connect with

most digital interface directly, easy to do the level shift.

High system level EMC performance enhance reliability

and stability of use.



UL recognition: up to 5000V_rmsfor 1 minute per UL1577

CQC certification per GB4943.1-2011

CSA component notice 5A

DIN VDE V 0884-11:2017-01

Applications



Power over ethernet

Isolated I²C, SMBus, or PMBus interface

I²C level shifting

Key Features

Battery Management



Up to 5000V_rmsInsulation voltage

I²C Clock rate: up to 2MHz

Power supply voltage: 2.5V to 5.5V

High CMTI: 150kV/us

Device Information

Part Number

Package

Body Size

NSi8100N

SOP8

4.90mm × 3.90mm

NSi8100W

SOW16

10.30mm × 7.50mm

Chip level ESD: HBM: ±6kV

High system level EMC performance:

Enhanced system level ESD, EFT, Surge immunity

Functional Block Diagrams



Low power consumption: 1.5mA/ch (1 Mbps)

Low propagation delay: <15ns

VDD₁

SDA₁

VDD₂

SDA₂

SCL₂

GND₂



Operation temperature: -40℃~125℃

SCL₁

GND₁

RoHS-compliant packages:

NSi8100N

SOP8

Figure 1. NSi8100N Block Diagram

SOW16

GND₁

GND₂

14 VDD₂

VDD₁

SDA₁

SCL₁

SDA₂

11 SCL₂

10 NC

GND₁

GND₂

NSi8100W

Figure 2. NSi8100W Block Diagram

Page 1

12 3 4 5 6 7...23

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