5秒后页面跳转
NSI6602C-DLAR PDF预览

NSI6602C-DLAR

更新时间: 2024-04-09 18:57:56
品牌 Logo 应用领域
纳芯微 - NOVOSENSE 开关栅极驱动晶体管驱动器
页数 文件大小 规格书
34页 2679K
描述
NSI6602是一系列高可靠性的隔离式双通道栅极驱动器IC, 可以设计为驱动高达2MHz开关频率的功率晶体管。每个输出可以以快速的25ns传播延迟和5ns的最大延迟匹配来提供最大4A/6A的拉灌电

NSI6602C-DLAR 数据手册

 浏览型号NSI6602C-DLAR的Datasheet PDF文件第2页浏览型号NSI6602C-DLAR的Datasheet PDF文件第3页浏览型号NSI6602C-DLAR的Datasheet PDF文件第4页浏览型号NSI6602C-DLAR的Datasheet PDF文件第5页浏览型号NSI6602C-DLAR的Datasheet PDF文件第6页浏览型号NSI6602C-DLAR的Datasheet PDF文件第7页 
NSI6602  
High Reliability Isolated Dual-Channel  
Gate Driver  
Datasheet (EN) 1.8  
Product Overview  
NSI6602 is a family of high reliability isolated dual-  
channel gate driver ICs which can be designed to drive  
power transistor up to 2MHz switching frequency. Each  
output could source 4A and sink 6A peak current with  
fast 25ns propagation delay and 5ns maximum delay  
matching.  
Safety Regulatory Approvals  
The NSI6602 provides 2500Vrms isolation per UL1577 in  
5-mm x 5-mm LGA13 package, 3000Vrms isolation in  
SOP16 package, and 5700Vrms isolation in SOW16 or  
SOW14 package. System robustness is supported by  
150kV/μs typical common-mode transient immunity  
(CMTI).  
UL recognition:  
LGA13: 2500Vrms for 1 minute per UL1577  
SOW16/SOW14: 5700Vrms for 1 minute per UL1577  
SOP16: 3000Vrms for 1 minute per UL1577  
The driver operates with a maximum supply voltage of  
25V, while the input-side accepts from 2.7V to 5V supply  
voltage. Under voltage lock-out (UVLO) protection is  
supported by all the power supply voltage pins.  
DIN VDE V 0884-11:2017-01  
CSA component notice 5A  
CQC certification per GB4943.1-2011  
Applications  
Key Features  
Isolated DC-DC and AC-to-DC power supplies in server,  
telecom, and industry  
Isolated dual channel driver  
DC-to-AC solar inverters  
Motor drives and EV charging  
UPS and battery chargers  
Input side supply voltage: 2.7V to 5.5V  
Driver side supply voltage: up to 25V with UVLO  
4A peak source and 6A peak sink output  
High CMTI: 150kV/μs typical  
Functional Block Diagram  
25ns typical propagation delay  
VDDI  
VDDA  
OUTA  
GNDA  
INA  
DT  
MOD  
DEMOD  
UVLO  
5ns maximum delay matching  
6ns maximum pulse width distortion  
Programmable deadtime  
UVLO,  
Disable  
&
Functional Isolation  
Dead-Time  
DIS  
INB  
VDDB  
OUTB  
GNDB  
Accepts minimum input pulse width 15ns  
Operation temperature: -40~125℃  
RoHS & REACH Qualified  
MOD  
DEMOD  
UVLO  
GNDI  
Figure 0.1 NSI6602 Block Diagram  
Copyright © 2023, NOVOSENSE  
Page 1  

与NSI6602C-DLAR相关器件

型号 品牌 描述 获取价格 数据表
NSI6602C-DSPNR NOVOSENSE NSI6602是一系列高可靠性的隔离式双通道栅极驱动器IC, 可以设计为驱动高达2MHz开

获取价格

NSI6602C-DSWKR NOVOSENSE NSI6602是一系列高可靠性的隔离式双通道栅极驱动器IC, 可以设计为驱动高达2MHz开

获取价格

NSI6602C-DSWR NOVOSENSE NSI6602是一系列高可靠性的隔离式双通道栅极驱动器IC, 可以设计为驱动高达2MHz开

获取价格

NSI6602C-Q1SPNR NOVOSENSE NSI6602-Q1是一系列高可靠性的隔离式双通道栅极驱动器IC, 可以设计为驱动高达2M

获取价格

NSI6602C-Q1SWKR NOVOSENSE NSI6602-Q1是一系列高可靠性的隔离式双通道栅极驱动器IC, 可以设计为驱动高达2M

获取价格

NSI6602C-Q1SWR NOVOSENSE NSI6602-Q1是一系列高可靠性的隔离式双通道栅极驱动器IC, 可以设计为驱动高达2M

获取价格