Datasheet > NSI6602B-Q1SWR

NSI6602B-Q1SWR

更新时间： 2024-04-09 18:57:59

品牌	Logo	应用领域
纳芯微 - NOVOSENSE		开关栅极驱动晶体管驱动器
页数	文件大小	规格书
29页	2033K
描述
NSI6602-Q1是一系列高可靠性的隔离式双通道栅极驱动器IC, 可以设计为驱动高达2MHz开关频率的功率晶体管。每个输出可以以快速的25ns传播延迟和5ns的最大延迟匹配来提供最大4A/6A的

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NSI6602B-Q1SWR 数据手册

NSI6602-Q1

High Reliability Isolated Dual-Channel

Gate Driver

Datasheet (EN) 1.3

Safety Regulatory Approvals

Product Overview



UL recognition:

NSI6602 is a family of high reliability isolated dual-

channel gate driver ICs which can be designed to drive

power transistor up to 2MHz switching frequency. Each

output could source 4A and sink 6A peak current with

fast 25ns propagation delay and 5ns maximum delay

matching.



SOW16/SOW14: 5700V_rmsfor 1 minute per UL1577

SOP16: 3000V_rmsfor 1 minute per UL1577



DIN VDE V 0884-11:2017-01

CSA component notice 5A

The NSI6602 provides 3000Vrms isolation in SOP16

package, and 5700Vrms isolation in SOW16 or SOW14

package. System robustness is supported by 150kV/us

typical common-mode transient immunity (CMTI).

CQC certification per GB4943.1-2011

Applications

The driver operates with a maximum supply voltage of

25V, while the input-side accepts from 2.7V to 5V supply

voltage. Under voltage lock-out (UVLO) protection is

supported by all the power supply voltage pins.



Isolated DC-DC and AC-to-DC power supplies in server,

telecom, and industry



DC-to-AC solar inverters

Motor drives and EV charging

UPS and battery chargers

Key Features



Isolated dual channel driver

Input side supply voltage: 2.7V to 5.5V

Driver side supply voltage: up to 25V with UVLO

4A peak source and 6A peak sink output

High CMTI: 150kV/μs typical

Functional Block Diagram

VDDI

VDDA

OUTA

GNDA

INA

MOD

DEMOD

UVLO

UVLO,

Disable

Functional Isolation

25ns typical propagation delay

Dead-Time

DIS

INB

VDDB

OUTB

GNDB

5ns maximum delay matching

MOD

DEMOD

UVLO

GNDI

6ns maximum pulse width distortion

Programmable deadtime

Figure 0.1 NSI6602 Block Diagram

Accepts minimum input pulse width 20ns

Operation temperature: -40℃~125℃

RoHS & REACH Qualified

AEC-Q100 (Grade 1) qualified for auto-motive

application

Page 1

12 3 4 5 6 7...29

下载PDF

与NSI6602B-Q1SWR相关器件

型号	品牌	描述	获取价格	数据表
NSI6602C-DLAR	NOVOSENSE	NSI6602是一系列高可靠性的隔离式双通道栅极驱动器IC, 可以设计为驱动高达2MHz开	获取价格
NSI6602C-DSPNR	NOVOSENSE	NSI6602是一系列高可靠性的隔离式双通道栅极驱动器IC, 可以设计为驱动高达2MHz开	获取价格
NSI6602C-DSWKR	NOVOSENSE	NSI6602是一系列高可靠性的隔离式双通道栅极驱动器IC, 可以设计为驱动高达2MHz开	获取价格
NSI6602C-DSWR	NOVOSENSE	NSI6602是一系列高可靠性的隔离式双通道栅极驱动器IC, 可以设计为驱动高达2MHz开	获取价格
NSI6602C-Q1SPNR	NOVOSENSE	NSI6602-Q1是一系列高可靠性的隔离式双通道栅极驱动器IC, 可以设计为驱动高达2M	获取价格
NSI6602C-Q1SWKR	NOVOSENSE	NSI6602-Q1是一系列高可靠性的隔离式双通道栅极驱动器IC, 可以设计为驱动高达2M	获取价格