Datasheet > NSI6601MC-Q1SPR

NSI6601MC-Q1SPR

更新时间： 2024-04-09 18:58:35

品牌	Logo	应用领域
纳芯微 - NOVOSENSE		栅极驱动双极性晶体管驱动器
页数	文件大小	规格书
27页	4650K
描述
NSi6601M是单通道隔离式栅极驱动器，适用于驱动IGBT，功率MOSFET和SiC MOSFET在许多应用中。提供分立输出用于分别控制上升和下降时间。它可以提供5A/5A的拉灌电流峰值电流

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NSI6601MC-Q1SPR 数据手册

NSi6601M-Q1

Single-Channel Isolated Gate Driver

Datasheet (EN) 1.0



CQCcertificationperGB4943.1-2011

AEC-Q100Grade1

Product Overview

The NSi6601M is a family of high reliability single-

channel isolated gate driver ICs which can be designed

to drive IGBTs, power MOSFETs and SiC MOSFETs in

many applications. That

output currents up to 5 A and an integrated active Miller

Clamp circuit with the same current rating .

The NSi6601M provides 3000Vrms isolation in SOP8

(150mil) package, and 5700Vrms isolation in SOP8

(300mil) package. System robustness is supported by

150kV/us minimum common-mode transient immunity

(CMTI).

The driver operates with a maximum supply voltage of

28V, while the input-side accepts from 3V to 17V supply

voltage. Under voltage lock-out (UVLO) protection is

supported by all the power supply voltage pins.

Because of high driving current ability, excellent

robustness, wide supply voltage range and fast signal

propagation, NSi6601M is suitable for high reliability,

power density and efficient switching power system.

Applications



IsolatedDC/DCandAC/DCPowerSupplies

provide minimum peak

HighVoltagePFC

SolarInverters

MotorDrivesandEV Charging

UPSandBatteryChargers

Device Information

Part Number

UVLO

Level

Package

AEC-

Q100

SOP8 (300 mil) YES

SOP8 (150 mil) YES

SOP8 (300 mil) YES

NSi6601MB-Q1SWVR

NSi6601MC-Q1SWVR

NSi6601MB-Q1SPR

12V

NSi6601MC-Q1SPR

NSi6601WC-Q1SWVR

Block Diagram

Key Features



Isolatedsingle-channeldriver

ActiveMillerClamp

Inputsidesupplyvoltage:3V to 17V

Driver side supply voltage: up to 28V with 9V, and 12V

UVLOoptions



5Apeaksourceandsinkoutputcurrent

MinimumCMTI:±150kV/us

80nstypicalpropagationdelay

Operationtemperature:-40°C ~125°C

NSi6601M/WDiagram

Safety Regulatory Approvals



ULrecognition:

 SOP8(300mil):5700V_rmsfor1minuteperUL1577

 SOP8(150mil):3000V_rmsfor1minuteperUL1577

DINVDE V 0884-11:2017-01



CSAcomponentnotice5A

Page 1

12 3 4 5 6 7...27

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与NSI6601MC-Q1SPR相关器件

型号	品牌	描述	获取价格	数据表
NSI6601MC-Q1SWVR	NOVOSENSE	NSi6601M是单通道隔离式栅极驱动器，适用于驱动IGBT，功率MOSFET和SiC M	获取价格
NSI6601WC-DSWVR	NOVOSENSE	NSI6601是单通道隔离式栅极驱动器，旨在驱动许多应用中的IGBT，功率MOSFET和S	获取价格
NSI6602A-DLAR	NOVOSENSE	NSI6602是一系列高可靠性的隔离式双通道栅极驱动器IC, 可以设计为驱动高达2MHz开	获取价格
NSI6602A-DSPNR	NOVOSENSE	NSI6602是一系列高可靠性的隔离式双通道栅极驱动器IC, 可以设计为驱动高达2MHz开	获取价格
NSI6602A-DSWKR	NOVOSENSE	NSI6602是一系列高可靠性的隔离式双通道栅极驱动器IC, 可以设计为驱动高达2MHz开	获取价格
NSI6602A-DSWR	NOVOSENSE	NSI6602是一系列高可靠性的隔离式双通道栅极驱动器IC, 可以设计为驱动高达2MHz开	获取价格

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