Datasheet > NSI6601MB-DSWVR

NSI6601MB-DSWVR

更新时间： 2024-11-19 17:00:31

品牌	Logo	应用领域
纳芯微 - NOVOSENSE		栅极驱动双极性晶体管驱动器
页数	文件大小	规格书
32页	1639K
描述
NSI6601M是单通道隔离式栅极驱动器，适用于驱动IGBT，功率MOSFET和SiC MOSFET在许多应用中。提供分立输出用于分别控制上升和下降时间。它可以提供5A/5A的拉灌电流峰值电流

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中文翻译

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数据手册

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NSI6601MB-DSWVR 数据手册

NSI6601M

Single-Channel Isolated Gate Driver

Datasheet (EN) 1.3



CQC certification per GB4943.1-2011

Product Overview

Applications

The NSI6601M is a single-channel isolated gate driver

designed to drive IGBTs, power MOSFETs and SiC

MOSFETs in many applications. It provides split output

that controls the rise and fall times individually. It can

source and sink 5A peak current.



Isolated DC/DC and AC/DC Power Supplies

High Voltage PFC

Solar Inverters

Motor Drives and EV Charging

UPS and Battery Chargers

The NSI6601M is available in SOP8 or SOW8 package, and

can support 3000VRMS and 5700VRMS isolation per

UL1577 respectively. System robustness is supported by

Device Information⁽¹⁾

150kV/μs minimum common-mode transient immunity

(CMTI).

Part Number

UVLO

Level

Package

Body Size

4.9×3.9×1.35mm

7.5×5.85×2.3mm

4.9×3.9×1.35mm

7.5×5.85×2.3mm

NSI6601MB-

DSPR

SOP8

The driver operates with a maximum supply voltage of

32V, while the input-side accepts from 3.1V to 17V supply

voltage. Under voltage lock-out (UVLO) protection is

supported by all the power supply voltage pins.

Because of high driving current ability, excellent

robustness, wide supply voltage range and fast signal

propagation, NSI6601M is suitable for high reliability,

power density and efficient switching power system.

NSI6601MB-

DSWVR

NSI6601MC-

DSPR

NSI6601MC-

DSWVR

NSI6601WC-

DSWVR

SOW8

SOP8

12V

SOW8

1) For all available packages, and order information refer to

the end of datasheet.

Key Features



Isolated single-channel driver

Block Diagram

Miller Clamp options (NSI6601MB/MC/WC)

Input side supply voltage: 3.1V to 17V

V_cc1

V_cc2

Driver side supply voltage: up to 32V with 9V, and 12V

UVLO options

IN+

UVLO2,

OUT

CLAMP

V_EE2

UVLO

and

Level

Shift,

and

Logic

Control



5A peak source and sink output current

Minimum CMTI: 150kV/μs

Input

Logic

IN-

80ns typical propagation delay

Operation ambient temperature: -40°C ~125°C

RoHS & REACH compliant

GND1

Lead-free component, suitable for lead-free soldering

profile: 260 °C ,MSL3

NSI6601M Diagram

Safety Regulatory Approvals



UL recognition: Isolation rating of 3000VRMS SOP8 and

5700VRMS SOW8 for 1 minute per UL1577



DIN VDE V 0884-11:2017-01

CSA component notice 5A

Page 1

12 3 4 5 6 7...32

中文翻译

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与NSI6601MB-DSWVR相关器件

型号	品牌	获取价格	描述	数据表
NSI6601MB-Q1SPR	NOVOSENSE	获取价格	NSI6601M是单通道隔离式栅极驱动器，适用于驱动IGBT，功率MOSFET和SiC M
NSI6601MB-Q1SWVR	NOVOSENSE	获取价格	NSI6601M是单通道隔离式栅极驱动器，适用于驱动IGBT，功率MOSFET和SiC M
NSI6601MC-DSPR	NOVOSENSE	获取价格	NSI6601M是单通道隔离式栅极驱动器，适用于驱动IGBT，功率MOSFET和SiC M
NSI6601MC-DSWVR	NOVOSENSE	获取价格	NSI6601M是单通道隔离式栅极驱动器，适用于驱动IGBT，功率MOSFET和SiC M
NSI6601MC-Q1SPR	NOVOSENSE	获取价格	NSi6601M是单通道隔离式栅极驱动器，适用于驱动IGBT，功率MOSFET和SiC M
NSI6601MC-Q1SWVR	NOVOSENSE	获取价格	NSi6601M是单通道隔离式栅极驱动器，适用于驱动IGBT，功率MOSFET和SiC M
NSI6601WC-DSWVR	NOVOSENSE	获取价格	NSI6601是单通道隔离式栅极驱动器，旨在驱动许多应用中的IGBT，功率MOSFET和S
NSI6601WC-Q1SWVR	NOVOSENSE	获取价格	NSI6601M是单通道隔离式栅极驱动器，适用于驱动IGBT，功率MOSFET和SiC M
NSI6602A-DLAR	NOVOSENSE	获取价格	NSI6602是一系列高可靠性的隔离式双通道栅极驱动器IC, 可以设计为驱动高达2MHz开
NSI6602A-DSPNR	NOVOSENSE	获取价格	NSI6602是一系列高可靠性的隔离式双通道栅极驱动器IC, 可以设计为驱动高达2MHz开

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