Datasheet > NSI1200

NSI1200

更新时间： 2024-04-09 18:59:12

品牌	Logo	应用领域
纳芯微 - NOVOSENSE		隔离技术
页数	文件大小	规格书
20页	1333K
描述
NSI1200是输出与输出基于NOVOSENSE电容隔离技术的隔离电流采样运放。此系列产品具有线性差分输入信号±250mV范围(满量程±320mV)。故障安全功能包括输入共模过压检测和VDD1缺失

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NSI1200 数据手册

NSi1200

High Reliability Reinforced

Isolated Amplifier

Datasheet (EN) 1.3



VDD1 monitoring

Product Overview

Input common-mode overvoltage detection

NSI1200 is a high-performance isolated amplifier with

output separated from input based on the NOVOSENSE

capacitive isolation technology. The device has a linear

differential input signal range of 250mV ( 320mV full-

scale). The differential input is ideally suited to shunt

resistor-based current sensing in high voltage

applications where isolation is required.



Operation Temperature: -40℃~125℃

RoHS-Compliant Packages:

SOP8(300mil)

DUB8

Safety Regulatory Approvals

The device has a fixed gain of 8 and provides a

differential analog output.



UL recognition: up to 5000V_rmsfor 1 minute per UL1577

The low offset and gain drift ensure the accuracy over the

entire temperature range. High common-mode transient

immunity ensures that the device is able to provide

accurate and reliable measurements even in the

presence of high-power switching such as in motor

control applications.

CQC certification per GB4943.1-2011

CSA component notice 5A approval IEC60950-1 standard

DIN VDE V 0884-11:2017-01

Applications

The fail-safe functions including input common-mode

overvoltage detection and missing VDD1 detection

simplify system-level design and diagnostics.



Shunt current monitoring

AC motor controls

Power and solar inverters

Uninterruptible Power Suppliers

Automotive onboard chargers

Key Features



Up to 5000V_rmsInsulation voltage

250mV linear Input Voltage Range

Fixed Gain: 8

Device Information

Part Number

Package

Body Size

5.85mm × 7.50mm

NSI1200-DSWVR

SOP8(300mil)

Low Offset Error and Drift:

NSI1200-DDBR

DUB8

9.27mm × 6.20mm

0.5mV (Max), -4~4μV/℃(Max)

Low Gain Error and Drift:

Functional Block Diagrams



VDD1

VDD2

0.3% (Max), 50ppm/℃(Max)

Low Nonlinearity and Drift:

0.03% (Max), 1ppm/℃(Typ)

SNR: 86dB (Typ, BW=10kHz), 72dB (Typ, BW=100kHz)

Bandwidth: 100kHz (Typ)

VDD1 detection

Reference

Retiming

INP

INN

and 4^th

OUTP

OUTN

Order Active

Low-Pass

Filter

Σ-Δ modulator



Oscillator

V_CMdetection

GND1

GND2

Figure 1. NSi1200 Block Diagram

High CMTI: 150kV/μs (Typ)

System-Level Diagnostic Features:

Page 1

12 3 4 5 6 7...20

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