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74F219SJ PDF预览

74F219SJ

更新时间: 2024-02-16 02:24:53
品牌 Logo 应用领域
美国国家半导体 - NSC 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
8页 166K
描述
64-Bit Random Access Memory with TRI-STATEE Outputs

74F219SJ 技术参数

生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP,针数:16
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.77
最长访问时间:20 nsJESD-30 代码:R-PDSO-G16
长度:10.3 mm内存密度:64 bit
内存集成电路类型:STANDARD SRAM内存宽度:4
功能数量:1端子数量:16
字数:16 words字数代码:16
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:16X4
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:2.65 mm最大供电电压 (Vsup):5.25 V
最小供电电压 (Vsup):4.75 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
宽度:7.5 mmBase Number Matches:1

74F219SJ 数据手册

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November 1994  
54F/74F219  
64-Bit Random Access Memory with TRI-STATE  
Outputs  
É
General Description  
Features  
Y
TRI-STATE outputs for data bus applications  
Buffered inputs minimize loading  
Address decoding on-chip  
The ’F219 is a high-speed 64-bit RAM organized as a  
16-word by 4-bit array. Address inputs are buffered to mini-  
mize loading and are fully decoded on-chip. The outputs are  
TRI-STATE and are in the high-impedance state whenever  
the Chip Select (CS) input is HIGH. The outputs are active  
only in the Read mode. This device is similar to the ’F189  
but features non-inverting, rather than inverting, data out-  
puts.  
Y
Y
Y
Y
Diode clamped inputs minimize ringing  
Available in SOIC (300 mil only)  
Package  
Commercial  
74F219PC  
Military  
Package Description  
Number  
N16E  
J16A  
16-Lead (0.300 Wide) Molded Dual-In-Line  
×
54F219DL (Note 2)  
16-Lead Ceramic Dual-In-Line  
74F219SC (Note 1)  
74F219SJ (Note 1)  
M16B  
M16D  
W16A  
E20A  
16-Lead (0.300 Wide) Molded Small Outline, JEDEC  
×
16-Lead (0.300 Wide) Molded Small Outline, EIAJ  
×
54F219FL (Note 2)  
54F219LL (Note 2)  
16-Lead Cerpack  
20-Lead Ceramic Leadless Chip Carrier, Type C  
e
Note 1: Devices also available in 13 reel. Use suffix  
SCX and SJX.  
×
Note 2: Military grade device with environmental and burn-in processing. Use suffix  
e
DLQB, FLQB and LLQB.  
Logic Symbol  
Connection Diagrams  
Pin Assignment for  
DIP, SOIC and Flatpak  
Pin Assignment  
for LCC  
TL/F/9500–1  
TL/F/9500–2  
TL/F/9500–3  
TRI-STATEÉ is a registered trademark of National Semiconductor Corporation.  
C
1995 National Semiconductor Corporation  
TL/F/9500  
RRD-B30M105/Printed in U. S. A.  

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