Datasheet > 2N7002

2N7002

更新时间： 2024-01-25 04:22:02

品牌	Logo	应用领域
美国国家半导体 - NSC		晶体晶体管开关光电二极管
页数	文件大小	规格书
10页	209K
描述
N-Channel Enhancement Mode Field Effect Transistor

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2N7002 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.55	Is Samacsys：	N
湿度敏感等级：	1	峰值回流温度（摄氏度）：	260
处于峰值回流温度下的最长时间：	10	Base Number Matches：	1

2N7002 数据手册

March 1993

2N7000/2N7002/NDF7000A/NDS7002A

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

Efficient high density cell design approaching

(3 million/in )

These n-channel enhancement mode field effect transistors

are produced using National’s very high cell density third

generation DMOS technology. These products have been

designed to minimize on-state resistance provide rugged

and reliable performance and fast switching. They can be

used, with a minimum of effort, in most applications requir-

ing up to 400 mA DC and can deliver pulsed currents up to

2A. This product is particularly suited to low voltage, low

current applications, such as small servo motor controls,

power MOSFET gate drivers, and other switching applica-

tions.

Voltage controlled small signal switch

Rugged

High saturation current

Low R

(ON)

TL/G/11378–2

TL/G/11378–1

TO-92

7000 Series

TO-236 AB

(SOT-23)

7002 Series

TL/G/11378–3

Absolute Maximum Ratings

Symbol

Parameter

Drain-Source Voltage

2N7000

2N7002

NDF7000A

NDS7002A

Units

DSS

DGR

GSS

Drain-Gate Voltage (R

Gate-Source Voltage

1 MX)

400

Drain CurrentÐContinuous

200

500

400

3.2

115

800

200

1.6

280

1500

300

2.4

ÐPulsed

2000

625

25 C

Total Power Dissipation

Derating above 25 C

mW/ C

65 to 150

T , T

J STG

Operating and Storage Temperature Range

55 to 150

Maximum Lead Temperature for Soldering

300

Purposes, (/16* from Case for 10 Seconds

1995 National Semiconductor Corporation

TL/G/11378

RRD-B30M115/Printed in U. S. A.

12 3 4 5 6 7...10

下载PDF

与2N7002相关器件

型号	品牌	描述	获取价格	数据表
2N7002,215	NXP	2N7002 - 60 V, 300 mA N-channel Trench MOSFET TO-236 3-Pin	获取价格
2N7002/D87Z	TI	115mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB	获取价格
2N7002/E8	VISHAY	Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Meta	获取价格
2N7002/L99Z	TI	115mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB	获取价格
2N7002/S62Z	TI	115mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB	获取价格
2N7002/T3	NXP	TRANSISTOR 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3,	获取价格