是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | not_compliant |
风险等级: | 5.67 | FET 技术: | JUNCTION |
最高工作温度: | 200 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.35 W | 子类别: | Other Transistors |
表面贴装: | NO | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N307 | ETC | TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 5A I(C) | TO-3 |
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2N3070 | MOTOROLA | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18, |
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2N3071 | NSC | TRANSISTOR,JFET,N-CHANNEL,100NA I(DSS),TO-18 |
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2N3072 | CENTRAL | Small Signal Transistors |
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2N3072 | NJSEMI | 20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A |
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2N3072LEADFREE | CENTRAL | Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, TO-39, 3 PI |
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