Datasheet > NSBA144EF3T5G

NSBA144EF3T5G

更新时间： 2024-11-28 06:00:43

品牌	Logo	应用领域
安森美 - ONSEMI		晶体数字晶体管
页数	文件大小	规格书
6页	113K
描述
Digital Transistors (BRT)

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中文翻译

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NSBA144EF3T5G 数据手册

NSBA114EF3T5G Series

Preferred Devices

Digital Transistors (BRT)

PNP Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The digital transistor

contains a single transistor with a monolithic bias network consisting

of two resistors; a series base resistor and a base−emitter resistor. The

digital transistor eliminates these individual components by

integrating them into a single device. The use of a digital transistor can

reduce both system cost and board space. The device is housed in the

SOT−1123 package which is designed for low power surface mount

applications.

http://onsemi.com

PNP SILICON DIGITAL

TRANSISTORS

PIN 3

COLLECTOR

(OUTPUT)

Features

PIN 1

BASE

(INPUT)

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

PIN 2

EMITTER

(GROUND)

• The SOT−1123 Package can be Soldered using Wave or Reflow.

• Available in 4 mm, 8000 Unit Tape & Reel

• These are Pb−Free Devices

• These are Halide−Free Devices

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Symbol

Value

Unit

Vdc

SOT−1123

CASE 524AA

STYLE 1

CBO

CEO

Vdc

100

mAdc

MARKING DIAGRAM

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

x M

= Device Code

= Date Code

G or G = Pb−Free Package

ORDERING INFORMATION

†

Device

Package

Shipping

NSBA114EFT5G SOT−1123 8000/Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

DEVICE MARKING INFORMATION

See specific marking information in the device marking table

on page 2 of this data sheet.

Semiconductor Components Industries, LLC, 2008

Publication Order Number:

September, 2008 − Rev. 2

NSBA114EF3/D

12 3 4 5 6

中文翻译

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与NSBA144EF3T5G相关器件

型号	品牌	获取价格	描述	数据表
NSBA144TF3	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 47 k, R2 = k
NSBA144TF3T5G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 47 k, R2 = k
NSBA144WDP6	ONSEMI	获取价格	Dual PNP Bias Resistor Transistors
NSBA144WDP6T5G	ONSEMI	获取价格	Dual Digital Transistors (BRT)
NSBA144WDXV6	ONSEMI	获取价格	Dual PNP Bias Resistor Transistors
NSBA144WDXV6T1	ONSEMI	获取价格	100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN
NSBA144WDXV6T1G	ONSEMI	获取价格	50V Dual PNP Bipolar Digital Transistor
NSBA144WF3	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 47 k, R2 = 22 k
NSBA144WF3T5G	ONSEMI	获取价格	Digital Transistors (BRT)
NSBA1XXXDXV6T1	ONSEMI	获取价格	Dual Bias Resistor Transistors

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