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NSBA143EF3T5G PDF预览

NSBA143EF3T5G

更新时间： 2024-11-25 06:00:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体数字晶体管
页数 文件大小 规格书
6页 113K
描述
Digital Transistors (BRT)

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中文翻译

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NSBA143EF3T5G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：5 weeks风险等级：5.78
其他特性：BUILT IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：15JESD-30 代码：R-PDSO-F3
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
最大功率耗散 (Abs)：0.297 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子面层：Tin (Sn)端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON

NSBA143EF3T5G 数据手册

 浏览型号NSBA143EF3T5G的Datasheet PDF文件第2页浏览型号NSBA143EF3T5G的Datasheet PDF文件第3页浏览型号NSBA143EF3T5G的Datasheet PDF文件第4页浏览型号NSBA143EF3T5G的Datasheet PDF文件第5页浏览型号NSBA143EF3T5G的Datasheet PDF文件第6页 
NSBA114EF3T5G Series  
Preferred Devices  
Digital Transistors (BRT)  
PNP Silicon Surface Mount Transistors  
with Monolithic Bias Resistor Network  
This new series of digital transistors is designed to replace a single  
device and its external resistor bias network. The digital transistor  
contains a single transistor with a monolithic bias network consisting  
of two resistors; a series base resistor and a base−emitter resistor. The  
digital transistor eliminates these individual components by  
integrating them into a single device. The use of a digital transistor can  
reduce both system cost and board space. The device is housed in the  
SOT−1123 package which is designed for low power surface mount  
applications.  
http://onsemi.com  
PNP SILICON DIGITAL  
TRANSISTORS  
PIN 3  
COLLECTOR  
(OUTPUT)  
Features  
PIN 1  
BASE  
(INPUT)  
R1  
R2  
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
PIN 2  
EMITTER  
(GROUND)  
• The SOT−1123 Package can be Soldered using Wave or Reflow.  
• Available in 4 mm, 8000 Unit Tape & Reel  
• These are Pb−Free Devices  
• These are Halide−Free Devices  
3
2
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
1
Rating  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
Symbol  
Value  
50  
Unit  
Vdc  
SOT−1123  
CASE 524AA  
STYLE 1  
V
CBO  
V
CEO  
50  
Vdc  
I
C
100  
mAdc  
MARKING DIAGRAM  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
x M  
x
M
= Device Code  
= Date Code  
G or G = Pb−Free Package  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
NSBA114EFT5G SOT−1123 8000/Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking table  
on page 2 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
September, 2008 − Rev. 2  
NSBA114EF3/D  
123456

中文翻译

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