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NSBA124XDXV6T1G

更新时间： 2024-11-26 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管晶体管
页数 文件大小 规格书
20页 148K
描述
50V Dual PNP Bipolar Digital Transistor

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中文翻译

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NSBA124XDXV6T1G 技术参数

是否无铅：不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F6针数：6
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：17 weeks风险等级：5.78
Is Samacsys：N其他特性：BUILT IN BIAS RESISTOR RATIO IS 0.47
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：80
JESD-30 代码：R-PDSO-F6JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：6封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
最大功率耗散 (Abs)：0.5 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子面层：Tin (Sn)端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管元件材料：SILICONBase Number Matches：1

NSBA124XDXV6T1G 数据手册

 浏览型号NSBA124XDXV6T1G的Datasheet PDF文件第2页浏览型号NSBA124XDXV6T1G的Datasheet PDF文件第3页浏览型号NSBA124XDXV6T1G的Datasheet PDF文件第4页浏览型号NSBA124XDXV6T1G的Datasheet PDF文件第5页浏览型号NSBA124XDXV6T1G的Datasheet PDF文件第6页浏览型号NSBA124XDXV6T1G的Datasheet PDF文件第7页 
MUN5111DW1T1 Series  
Preferred Devices  
Dual Bias Resistor  
Transistors  
PNP Silicon Surface Mount Transistors  
with Monolithic Bias Resistor Network  
http://onsemi.com  
The BRT (Bias Resistor Transistor) contains a single transistor with a  
monolithic bias network consisting of two resistors; a series base resistor  
and a base−emitter resistor. These digital transistors are designed to  
replace a single device and its external resistor bias network. The BRT  
eliminates these individual components by integrating them into a single  
device. In the MUN5111DW1T1 series, two BRT devices are housed in  
the SOT−363 package which is ideal for low−power surface mount  
applications where board space is at a premium.  
(3)  
(2)  
(1)  
R
1
R
2
Q
1
Q
2
R
2
R
1
Features  
(4)  
(5)  
(6)  
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
• Pb−Free Packages are Available  
1
MAXIMUM RATINGS  
(T = 25°C unless otherwise noted, common for Q and Q )  
A
1
2
SOT−363  
CASE 419B  
STYLE 1  
Rating  
Symbol  
Value  
−50  
−50  
−100  
Unit  
Vdc  
Collector-Base Voltage  
V
CBO  
Collector-Emitter Voltage  
Collector Current  
V
Vdc  
CEO  
I
mAdc  
C
THERMAL CHARACTERISTICS  
MARKING DIAGRAM  
Characteristic  
(One Junction Heated)  
Symbol  
Max  
Unit  
6
Total Device Dissipation  
T = 25°C  
A
P
187 (Note 1)  
256 (Note 2)  
mW  
D
xx M G  
1.5 (Note 1) mW/°C  
2.0 (Note 2)  
Derate above 25°C  
G
1
Thermal Resistance,  
Junction-to-Ambient  
R
q
JA  
670 (Note 1) °C/W  
490 (Note 2)  
Characteristic  
(Both Junctions Heated)  
xx = Device Code (Refer to page 2)  
Symbol  
Max  
Unit  
M
= Date Code  
Total Device Dissipation  
P
250 (Note 1)  
385 (Note 2)  
2.0 (Note 1) mW/°C  
3.0 (Note 2)  
mW  
D
G
= Pb−Free Package  
T = 25°C  
A
(Note: Microdot may be in either location)  
Derate above 25°C  
ORDERING INFORMATION  
See detailed ordering and shipping information in the table on  
page 2 of this data sheet.  
Thermal Resistance,  
Junction-to-Ambient  
R
q
JA  
493 (Note 1) °C/W  
325 (Note 2)  
Thermal Resistance,  
Junction-to-Lead  
R
q
JL  
188 (Note 1) °C/W  
208 (Note 2)  
DEVICE MARKING INFORMATION  
Junction and Storage Temperature Range T , T  
−55 to +150  
°C  
See specific marking information in the device marking table  
on page 2 of this data sheet.  
J
stg  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Preferred devices are recommended choices for future use  
and best overall value.  
1. FR−4 @ Minimum Pad  
2. FR−4 @ 1.0 x 1.0 inch Pad  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
September, 2005 − Rev. 6  
MUN5111DW1T1/D  
 
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与NSBA124XDXV6T1G相关器件

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 		100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 463A-01,
NSBA124XF3 ONSEMI

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NSBA124XF3T5G ONSEMI

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NSBA143EDXV6T1 ROCHESTER

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 		100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN
NSBA143EDXV6T1G ONSEMI

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 		50V Dual PNP Digital Transistor
NSBA143EDXV6T5 ONSEMI

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 		100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN
NSBA143EDXV6T5G ONSEMI

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 		100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 463A-01,
NSBA143EF3 ONSEMI

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 		Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 k
NSBA143EF3T5G ONSEMI

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 		Digital Transistors (BRT)

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