Datasheet > NSBA124EDXV6T5G

NSBA124EDXV6T5G

更新时间： 2024-11-26 06:36:15

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
11页	101K
描述
100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 463A-01, 6 PIN

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中文翻译

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数据手册
替代型号

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NSBA124EDXV6T5G 数据手册

NSBA114EDXV6T1,

NSBA114EDXV6T5 SERIES

Preferred Devices

Dual Bias Resistor

Transistors

PNP Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

http://onsemi.com

(3)

(2)

(1)

The BRT (Bias Resistor Transistor) contains a single transistor with

a monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. These digital transistors are

designed to replace a single device and its external resistor bias

network. The BRT eliminates these individual components by

integrating them into a single device. In the NSBA114EDXV6T1

series, two BRT devices are housed in the SOT−563 package which is

ideal for low−power surface mount applications where board space is

at a premium.

(4)

(5)

(6)

SOT−563

Features

CASE 463A

PLASTIC

STYLE 1

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• These are Pb−Free Devices

MARKING DIAGRAM

MAXIMUM RATINGS

(T = 25°C unless otherwise noted, common for Q and Q )

xx M G

Rating

Symbol

Value

−50

Unit

Collector-Base Voltage

Vdc

CBO

CEO

Collector-Emitter Voltage

Collector Current

−50

Vdc

xx = Device Code

(Refer to page 2)

−100

mAdc

= Date Code

THERMAL CHARACTERISTICS

= Pb−Free Package

(Note: Microdot may be in either location)

Characteristic

(One Junction Heated)

Symbol

Max

Unit

ORDERING INFORMATION

Total Device Dissipation @ T = 25°C

357

2.9

mW/°C

†

Derate above 25°C (Note 1)

Shipping

Device

Package

Thermal Resistance, Junction-to-Ambient

(Note 1)

350

°C/W

NSBA1xxxDXV6T1 SOT−563* 4000/Tape & Reel

NSBA1xxxDXV6T1G SOT−563* 4000/Tape & Reel

Characteristic

(Both Junctions Heated)

NSBA1xxxDXV6T5 SOT−563* 8000/Tape & Reel

NSBA1xxxDXV6T5G SOT−563* 8000/Tape & Reel

Symbol

Max

Unit

Total Device Dissipation @ T = 25°C

500

4.0

mW/°C

Derate above 25°C (Note 1)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Thermal Resistance, Junction-to-Ambient

(Note 1)

250

°C/W

Junction and Storage Temperature

Range

T , T

−55 to

+150

°C

stg

**This package is inherently Pb−Free.

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−4 @ Minimum Pad

DEVICE MARKING INFORMATION

See specific marking information in the device marking table

on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

April, 2006 − Rev. 6

NSBA114EDXV6/D

12 3 4 5 6 7...11

中文翻译

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NSBA124EDXV6T5G 替代型号

型号	品牌	替代类型	描述	数据表
PEMB10,115	NXP	功能相似	PEMB10; PUMB10 - PNP/PNP resistor-equipped tr
NSBA114EDXV6T1G	ONSEMI	功能相似	Dual PNP Bias Resistor Transistors

与NSBA124EDXV6T5G相关器件

型号	品牌	获取价格	描述	数据表
NSBA124EF3	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 22 k, R2 = 22 k
NSBA124EF3T5G	ONSEMI	获取价格	Digital Transistors (BRT)
NSBA124XDXV6T1	ROCHESTER	获取价格	100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN
NSBA124XDXV6T1G	ONSEMI	获取价格	50V Dual PNP Bipolar Digital Transistor
NSBA124XDXV6T5G	ONSEMI	获取价格	100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, PLASTIC, CASE 463A-01,
NSBA124XF3	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 22 k, R2 = 47 k
NSBA124XF3T5G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 22 k, R2 = 47 k
NSBA143EDP6T5G	ONSEMI	获取价格	Dual Digital Transistors (BRT)
NSBA143EDXV6T1	ROCHESTER	获取价格	100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN
NSBA143EDXV6T1G	ONSEMI	获取价格	50V Dual PNP Digital Transistor

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