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NSBA124EDXV6T1G PDF预览

NSBA124EDXV6T1G

更新时间： 2024-11-26 01:16:55
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管晶体管
页数 文件大小 规格书
8页 123K
描述
Dual PNP Bias Resistor Transistors R1 = 22 k, R2 = 22 k

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中文翻译

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NSBA124EDXV6T1G 技术参数

是否无铅：不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F6针数：6
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：17 weeks风险等级：5.74
Is Samacsys：N其他特性：BUILT IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：60
JESD-30 代码：R-PDSO-F6JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：6封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
最大功率耗散 (Abs)：0.5 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子面层：Tin (Sn)端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管元件材料：SILICONBase Number Matches：1

NSBA124EDXV6T1G 数据手册

 浏览型号NSBA124EDXV6T1G的Datasheet PDF文件第2页浏览型号NSBA124EDXV6T1G的Datasheet PDF文件第3页浏览型号NSBA124EDXV6T1G的Datasheet PDF文件第4页浏览型号NSBA124EDXV6T1G的Datasheet PDF文件第5页浏览型号NSBA124EDXV6T1G的Datasheet PDF文件第6页浏览型号NSBA124EDXV6T1G的Datasheet PDF文件第7页 
MUN5112DW1,  
NSBA124EDXV6,  
NSBA124EDP6  
Dual PNP Bias Resistor  
Transistors  
R1 = 22 kW, R2 = 22 kW  
http://onsemi.com  
PIN CONNECTIONS  
PNP Transistors with Monolithic Bias  
Resistor Network  
(3)  
(2)  
(1)  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a  
base−emitter resistor. The BRT eliminates these individual  
components by integrating them into a single device. The use of a BRT  
can reduce both system cost and board space.  
R
1
R
2
Q
1
Q
2
R
2
R
1
Features  
(4)  
(5)  
(6)  
• S and NSV Prefix for Automotive and Other Applications  
Requiring Unique Site and Control Change Requirements;  
AEC-Q101 Qualified and PPAP Capable  
MARKING DIAGRAMS  
• Simplifies Circuit Design  
• Reduces Board Space  
6
SOT−363  
CASE 419B  
0B M G  
• Reduces Component Count  
G
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
1
1
Compliant  
MAXIMUM RATINGS  
SOT−563  
CASE 463A  
(T = 25°C, common for Q1 and Q2, unless otherwise noted)  
0B M G  
A
G
Rating  
Collector−Base Voltage  
Collector−Emitter Voltage  
Collector Current − Continuous  
Input Forward Voltage  
Symbol  
Max  
50  
Unit  
Vdc  
V
CBO  
CEO  
V
50  
Vdc  
SOT−963  
CASE 527AD  
m
M G  
I
C
100  
40  
mAdc  
Vdc  
G
V
IN(fwd)  
1
Input Reverse Voltage  
V
10  
Vdc  
IN(rev)  
0B/m  
M
G
=
=
=
Specific Device Code  
Date Code*  
Pb−Free Package  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
MUN5112DW1T1G,  
SMUN5112DW1T1G  
SOT−363  
3,000 / Tape & Reel  
NSBA124EDXV6T1G  
NSBA124EDP6T5G  
SOT−563  
SOT−963  
4,000 / Tape & Reel  
8,000 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and  
tape sizes, please refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
September, 2012 − Rev. 0  
DTA124ED/D  
12345678

中文翻译

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